BF2040W ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)BF2040...Silicon N-Channel MOSFET Tetrode• For low noise , high gain controlled input stages up ..
BF240 ,NPN Radio Frequency TransistorBF240BF240NPN RF TransistorTO-9211. Collector 2. Emitter 3. BaseAbsolute Maximum Ratings* T =25° ..
BF244A ,N-Channel RF Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
BF244A ,N-Channel RF Amplifierapplicationsoperating up to 450 MHz, and for analog switching requiring lowcapacitance. Sourced fr ..
BF244B ,N-Channel RF Amplifierapplicationsoperating up to 450 MHz, and for analog switching requiring lowcapacitance. Sourced fr ..
BF244C ,N-Channel RF Amplifierapplicationsoperating up to 450 MHz, and for analog switching requiring lowcapacitance. Sourced fr ..
BR9010 , 1, 2, and 4k bit EEPROMs for direct connection to serial ports
BR9010 , 1, 2, and 4k bit EEPROMs for direct connection to serial ports
BR9010FV , 1, 2, and 4k bit EEPROMs for direct connection to serial ports
BR9016RFV , 8k, 16k bit EEPROMs for direct connection to serial ports
BR9040F , 1, 2, and 4k bit EEPROMs for direct connection to serial ports
BR9080ARFV-W , 8k, 16k bit EEPROMs for direct connection to serial ports
BF2040-BF2040R-BF2040W
RF-MOSFET
BF2040...
Silicon N-Channel MOSFET Tetrode• For low noise , high gain controlled
input stages up to 1GHz
• Operating voltage 5 V
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BF2040...
Electrical Characteristics
DC Characteristics
BF2040...
Electrical Characteristics
AC Characteristics - (verified by random sampling)
BF2040...
Total power dissipation Ptot = ƒ(TS)
BF2040, BFD2040R
20
40
60
80
100
120
140
160
180
220
tot
Total power dissipation Ptot = ƒ(TS)
BF2040W
20
40
60
80
100
120
140
160
180
220
tot
Drain current ID = ƒ(IG1)G2S = 4V
10
12
14
16
18
20
22
24
Output characteristics ID = ƒ(VDS)G2S = 4 V
VG1S = Parameter
10
12
14
16
18
20
22
26
BF2040...
Gate 1 current IG1 = ƒ(VG1S)DS = 5VG2S = Parameter
15
30
45
60
75
90
105
120
135
150
165
195
Gate 1 forward transconductancefs = ƒ(ID)DS = 5V, VG2S = Parameter
10
15
20
25
30
35
45
Drain current ID = ƒ(VG1S)DS = 5V
VG2S = Parameter
10
12
14
16
18
20
22
24
Drain current ID = ƒ(VGG)DS = 5V, VG2S = 4V, RG1 = 80kΩ
(connected to VGG, VGG=gate1 supply voltage)
10
12
16
BF2040...
Drain current ID = ƒ(VGG)G2S = 4VG1 = Parameter in kΩ
10
12
14
16
18
20
22
24
