BF2030 ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.AC
BF2030R ,RF-MOSFETBF2030...Silicon N-Channel MOSFET Tetrode• For low noise, high gain controlled input stages up t ..
BF2030W ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BF2040 ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BF2040R ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.AC
BF2040W ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)BF2040...Silicon N-Channel MOSFET Tetrode• For low noise , high gain controlled input stages up ..
BR34L02FVT-WE2 , 2Kbit Serial I2C BUS EEPROM For SPD DRAM Memory Module
BR34L02FV-WE2 , 2Kbit Serial I2C BUS EEPROM For SPD DRAM Memory Module
BR35H160F-WCE2 , 125℃ SPI BUS ICs BR35 Family
BR35H160F-WCE2 , 125℃ SPI BUS ICs BR35 Family
BR9010 , 1, 2, and 4k bit EEPROMs for direct connection to serial ports
BR9010 , 1, 2, and 4k bit EEPROMs for direct connection to serial ports
BF2030-BF2030R-BF2030W
RF-MOSFET
BF2030...
Silicon N-Channel MOSFET Tetrode• For low noise, high gain controlled
input stages up to 1GHz
• Operating voltage 5V
ESD: Electrostatic discharge sensitive device, observe handling precaution!Class 2 (2000V - 4000V) pin to pin Human Body Model
Maximum Ratings
BF2030...
Thermal Resistance
Electrical Characteristics
DC CharacteristicsFor calculation of RthJA please refer to Application Note Thermal Resistance
BF2030...
Electrical Characteristics
AC Characteristics (verified by random sampling)
BF2030...
Total power dissipation Ptot = ƒ(TS)
BF2030, BF2030R
20
40
60
80
100
120
140
160
180
220
tot
Total power dissipation Ptot = ƒ(TS)
BF2030W
20
40
60
80
100
120
140
160
180
220
tot
Drain current ID = ƒ(IG1)G2S = 4V1020304050607080
10
12
14
16
18
20
22
24
Output characteristics ID = ƒ(VDS)G2S = 4V
VG1S = Parameter
10
12
14
16
20
BF2030...
Gate 1 current IG1 = ƒ(VG1S)DS = 5VG2S = Parameter
15
30
45
60
75
90
105
120
135
150
165
180
Gate 1 forward transconductancefs = ƒ(ID)DS = 5V, VG2S = Parameter
10
15
20
25
30
40
Drain current ID = ƒ(VG1S)DS = 5V
VG2S = Parameter
10
12
14
16
18
20
22
24
Drain current ID = ƒ(VGG)DS = 5V, VG2S = 4V, RG1 = 100kΩ
(connected to VGG, VGG=gate1 supply voltage)
10
11
13
BF2030...
Drain current ID = ƒ(VGG)G2S = 4VG1 = Parameter in kΩ
10
12
14
16
18
20
22
24
