BF1212R ,BF1212; BF1212R; BF1212WR; N-channel dual-gate MOS-FETsapplications.12DESCRIPTIONTop view MSB014Enhancement type N-channel field-effect transistor withsou ..
BF1212WR ,N-channel dual-gate MOS-FETsLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BF1214 ,Dual N-channel dual-gate MOSFETapplications with 5 V supplyvoltageu digital and analog television tunersu professional communicati ..
BF167 ,Conductor Products, Inc. - Electrical characterlitics
BF167 ,Conductor Products, Inc. - Electrical characterlitics
BF180 ,Conductor Products, Inc. - Electrical characterlitics
BR24T02NUX-WGTR , High Reliability Serial EEPROMs
BR25L010F-W , SPI BUS 1Kbit (128 x 8bit) EEPROM
BR25L160F-W , SPI BUS 16Kbit (2,048 x 8bit) EEPROM
BR25L640F-W , SPI BUS 64Kbit (8,192 x 8bit) EEPROM
BR25L640F-WE2 , High speed clock action up to 5MHz(Max)
BR34L02FVT-WE2 , 2Kbit Serial I2C BUS EEPROM For SPD DRAM Memory Module
BF1212R
N-channel dual-gate MOS-FETs
Philips Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR
FEATURES Short channel transistor with high forward transfer
admittance to input capacitance ratio Low noise gain controlled amplifier Excellent low frequency noise performance Partly internal self-biasing circuit to ensure good
cross-modulation performance during AGC and good stabilization.
APPLICATIONS Gain controlled low noise VHF and UHF amplifiers for V digital and analog television tuner applications.
DESCRIPTIONEnhancement type N-channel field-effect transistor with
source and substrate interconnected. Integrated diodes
between gates and source protect against excessive input
voltage surges. The BF1212, BF1212R and BF1212WR
are encapsulated in the SOT143B, SOT143R and
SOT343R plastic packages respectively.
PINNING
QUICK REFERENCE DATA
Philips Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR
ORDERING INFORMATION
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Note Ts is the temperature of the soldering point of the source lead.
THERMAL CHARACTERISTICS
Philips Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR
STATIC CHARACTERISTICS =25 °C unless otherwise specified.
Note RG1 connects G1to VGG =5V.
Philips Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR
DYNAMIC CHARACTERISTICSCommon source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID=12 mA; unless otherwise specified.
Note Measured in test circuit Fig.21.
Philips Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR
Philips Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR
Philips Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR
