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BF1206
Dual N-channel dual-gate MOS-FET
Philips Semiconductors Product specification
Dual N-channel dual-gate MOS-FET BF1206
FEATURES Two low noise gain controlled amplifiers in a single
package Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance
ratio.
APPLICATIONS Gain controlled low noise amplifiers for VHF and UHF
applications with5V supply voltage, suchas digital and
analog television tuners.
DESCRIPTIONThe BF1206 is a combination of two different dual gate
MOS-FET amplifiers with shared source and gate2 leads.
Thesource and substrate are interconnected. Internal bias
circuits enable DC stabilization and a very good
cross-modulation performance during AGC. Integrated
diodes between the gates and source protect against
excessive input voltage surges. The transistor is
encapsulatedin SOT363 micro-miniature plastic package.
PINNING - SOT363
QUICK REFERENCE DATA
Philips Semiconductors Product specification
Dual N-channel dual-gate MOS-FET BF1206
ORDERING INFORMATION
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Note Ts is the temperature at the soldering point of the source lead.
THERMAL CHARACTERISTICS
Philips Semiconductors Product specification
Dual N-channel dual-gate MOS-FET BF1206
STATIC CHARACTERISTICS =25 °C unless otherwise specified.
Note RG1 connects gate 1 to VGG =5V.
Philips Semiconductors Product specification
Dual N-channel dual-gate MOS-FET BF1206
DYNAMIC CHARACTERISTICS AMPLIFIERaCommon source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID=18 mA; unless otherwise specified.
Notes Calculated from measured s-parameters. Measured in Fig.35 test circuit.
Philips Semiconductors Product specification
Dual N-channel dual-gate MOS-FET BF1206
GRAPHS FOR AMPLIFIERa
Philips Semiconductors Product specification
Dual N-channel dual-gate MOS-FET BF1206
Philips Semiconductors Product specification
Dual N-channel dual-gate MOS-FET BF1206
Philips Semiconductors Product specification
Dual N-channel dual-gate MOS-FET BF1206
Philips Semiconductors Product specification
Dual N-channel dual-gate MOS-FET BF1206
Philips Semiconductors Product specification
Dual N-channel dual-gate MOS-FET BF1206
Amplifier a scattering parametersVDS =5V; VG2-S =4V; ID=18 mA; Tamb =25°C
Noise dataVDS =5V; VG2-S =4V; ID=18 mA; Tamb =25°C
