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BF1205
Dual N-channel dual gate MOS-FET
Philips Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1205
FEATURES Two low noise gain controlled amplifiers in a single
package. One witha fully integrated bias and one witha
partly integrated bias Internal switch reduces the number of external
components Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance
ratio.
APPLICATIONS Gain controlled low noise amplifiers for VHF and UHF
applications with5V supply voltage, suchas digital and
analog television tuners and professional
communications equipment.
DESCRIPTIONThe BF1205 is a combination of two equal dual gate
MOS-FET amplifiers with shared source and gate2 leads
and an integrated switch. The integrated switch is
operatedby the gate1 biasof amplifierb. The source and
substrate are interconnected. Internal bias circuits enable stabilization and a very good cross-modulation
performance during AGC. Integrated diodes between the
gates and source protect against excessive input voltage
surges. The transistor is encapsulated in SOT363
micro-miniature plastic package.
PINNING - SOT363
ORDERING INFORMATION
Philips Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1205
QUICK REFERENCE DATA
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Note Ts is the temperature at the soldering point of the source lead.
THERMAL CHARACTERISTICS
Philips Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1205
STATIC CHARACTERISTICS =25 °C; per MOS-FET; unless otherwise specified.
Note RG1 connects gate1 (b) to VGG=0 V (see Fig.4). RG1 connects gate1 (b) to VGG=5 V (see Fig.4).
Philips Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1205
Philips Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1205
DYNAMIC CHARACTERISTICS AMPLIFIERaCommon source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID=12 mA; note1
Notes For the MOS-FET not in use: VG1-S (b)=0 V; VDS(b)=0V. Measured in Fig.13 test circuit.
Philips Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1205
GRAPHS FOR AMPLIFIERa
Philips Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1205
Philips Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1205
Philips Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1205
Philips Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1205
Philips Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1205
Scattering parameters: amplifieraVDS (a)=5 V; VG2-S =4V; ID(a)=12 mA; VDS (b)=0 V; VG-1S(b)=0 V; Tamb =25°C
Noise dataVDS (a)=5 V; VG2-S =4V; ID(a)=12 mA; VDS (b)=0 V; VG-1S(b)=0 V; Tamb =25°C
DYNAMIC CHARACTERISTICS AMPLIFIERbCommon source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID =12mA
