BF1204 ,Dual N-channel dual gate MOS-FETFEATURES PINNING - SOT363• Two low noise gain controlled amplifiers in a singlePIN DESCRIPTIONpacka ..
BF1204 ,Dual N-channel dual gate MOS-FETapplications with 3 to 9 V supply voltage, such as digitaland analog television tuners and professi ..
BF1204 ,Dual N-channel dual gate MOS-FETLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BF1204 ,Dual N-channel dual gate MOS-FET
BF1205 ,Dual N-channel dual gate MOS-FETapplications with 5 V supply voltage, such as digital andanalog television tuners and professionalc ..
BF1205 ,Dual N-channel dual gate MOS-FETLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
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BF1204
Dual N-channel dual gate MOS-FET
Philips Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1204
FEATURES Two low noise gain controlled amplifiers in a single
package Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance
ratio.
APPLICATIONS Gain controlled low noise amplifiers for VHF and UHF
applications with3to9V supply voltage, suchas digital
and analog television tuners and professional
communications equipment.
DESCRIPTIONThe BF1204 is a combination of two equal dual gate
MOS-FET amplifiers with shared source and gate2 leads.
Thesource and substrate are interconnected. Internal bias
circuits enable DC stabilization and a very good
cross-modulation performance during AGC. Integrated
diodes between the gates and source protect against
excessive input voltage surges. The transistor has a
SOT363 micro-miniature plastic package.
PINNING - SOT363
QUICK REFERENCE DATA
Note Ts is the temperature at the soldering point of the source lead.
Philips Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1204
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Philips Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1204
STATIC CHARACTERISTICS =25 °C; per MOS-FET; unless otherwise specified.
Note RG1 connects gate 1 to VGG =5V.
DYNAMIC CHARACTERISTICSCommon source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID=12 mA; per MOS-FET(1) ; unless otherwise specified.
Notes For the MOS-FET not in use: VG1-S= 0; VDS =0. Measured in Fig.19 test circuit.
Philips Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1204
ALL GRAPHS FOR ONE MOS-FET
Philips Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1204
