BF1203 ,Dual N-channel dual-gate MOSFETapplications with 3 to 9 V supply voltage, such as digital and analog television tuners and profess ..
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BF1204 ,Dual N-channel dual gate MOS-FETapplications with 3 to 9 V supply voltage, such as digitaland analog television tuners and professi ..
BF1204 ,Dual N-channel dual gate MOS-FETLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
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BF1203
Dual N-channel dual-gate MOSFET
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1203
FEATURES Two low noise gain controlled amplifiers in a single
package Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance
ratio.
APPLICATIONS Gain controlled low noise amplifiers for VHF and UHF
applications with 3to9 V supply voltage, such as digital
and analog television tuners and professional
communications equipment.
DESCRIPTIONThe BF1203 is a combination of two different dual gate
MOS-FET amplifiers with shared source and gate 2 leads.
The source and substrate are interconnected.
Internal bias circuits enable DC stabilization and a very
good cross-modulation performance during AGC.
Integrated diodes between the gates and source protect
against excessive input voltage surges. The transistor is
encapsulated in a SOT363 micro-miniature plastic
package.
QUICK REFERENCE DATA
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1203
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Note Ts is the temperature at the soldering point of the source lead.
THERMAL CHARACTERISTICS
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1203
STATIC CHARACTERISTICS =25 C unless otherwise specified.
Note RG1 connects gate 1 to VGG =5V.
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1203
DYNAMIC CHARACTERISTICS AMPLIFIERaCommon source; Tamb =25 C; VG2-S =4V; VDS =5V; ID=15 mA; unless otherwise specified.
Notes Calculated from measured s-parameters. Measured in Fig.35 test circuit.
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1203
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1203
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1203
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1203
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1203
Amplifier a scattering parameters
VDS =5V; VG2-S =4V; ID =15mA; Tamb =25C
