BF1201WR ,N-channel dual-gate PoLo MOS-FETsLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BF1202R ,N-channel dual-gate PoLo MOS-FETsapplications with(SOT143R).3 to 9 V supply voltage, such asdigital and analogue televisiontuners an ..
BF1202R ,N-channel dual-gate PoLo MOS-FETs
BF1202WR ,N-channel dual-gate PoLo MOS-FETsLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BF1203 ,Dual N-channel dual-gate MOSFETapplications with 3 to 9 V supply voltage, such as digital and analog television tuners and profess ..
BF1204 ,Dual N-channel dual gate MOS-FETFEATURES PINNING - SOT363• Two low noise gain controlled amplifiers in a singlePIN DESCRIPTIONpacka ..
BR24L32FV-WE2 , High Reliability Series EEPROMs I2C BUS
BR24L32F-WE2 , High Reliability Series EEPROMs I2C BUS
BR24L32-W , High Reliability Series EEPROMs I2C BUS
BR24L64-W , High Reliability Series EEPROMs I2C BUS
BR24L64-W , High Reliability Series EEPROMs I2C BUS
BR24S128FVT-WE2 , High Reliability Series EEPROMs I2C BUS
BF1201R-BF1201WR
N-channel dual-gate PoLo MOS-FETs
Philips Semiconductors Product specification
N-channel dual-gate PoLo MOS-FETs BF1201; BF1201R;
BF1201WR
FEATURES Short channel transistor with high
forward transfer admittanceto input
capacitance ratio Low noise gain controlled amplifier Partly internal self-biasing circuitto
ensure good cross-modulation
performance during AGC and good stabilization.
APPLICATIONS VHF and UHF applications withto9 V supply voltage, such as
digital and analogue television
tuners and professional
communications equipment.
DESCRIPTIONEnhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1201,
BF1201R and BF1201WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
PINNING
QUICK REFERENCE DATA
Philips Semiconductors Product specification
N-channel dual-gate PoLo MOS-FETs BF1201; BF1201R;
BF1201WR
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Note Ts is the temperature of the soldering point of the source lead.
THERMAL CHARACTERISTICS
Philips Semiconductors Product specification
N-channel dual-gate PoLo MOS-FETs BF1201; BF1201R;
BF1201WR
STATIC CHARACTERISTICS =25 °C; unless otherwise specified.
Note RG1 connects G1 to VGG =5V.
DYNAMIC CHARACTERISTICSCommon source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID=15 mA; unless otherwise specified.
Note Measured in Fig.21 test circuit.
Philips Semiconductors Product specification
N-channel dual-gate PoLo MOS-FETs BF1201; BF1201R;
BF1201WR
Philips Semiconductors Product specification
N-channel dual-gate PoLo MOS-FETs BF1201; BF1201R;
BF1201WR
Philips Semiconductors Product specification
N-channel dual-gate PoLo MOS-FETs BF1201; BF1201R;
BF1201WR
Philips Semiconductors Product specification
N-channel dual-gate PoLo MOS-FETs BF1201; BF1201R;
BF1201WR
