BF1108 ,Silicon RF switchesLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER MIN ..
BF1108R ,Silicon RF switches
BF1108R ,Silicon RF switches
BF115 ,Conductor Products, Inc. - Electrical characterlitics
BF1201R ,N-channel dual-gate MOSFETapplications with(SOT143R).3 to 9 V supply voltage, such asdigital and analogue televisiontuners an ..
BF1201R ,N-channel dual-gate MOSFETLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BR24L16FVM-WTR , High Reliability Series EEPROMs I2C BUS
BR24L16FVT-WE2 , High Reliability Series EEPROMs I2C BUS
BR24L16FV-W , I2C BUS 16Kbit (2,048 x 8bit) EEPROM
BR24L16-W , High Reliability Series EEPROMs I2C BUS
BR24L32FV-WE2 , High Reliability Series EEPROMs I2C BUS
BR24L32F-WE2 , High Reliability Series EEPROMs I2C BUS
BF1108
Silicon RF switches
Philips Semiconductors Product specification
Silicon RF switches BF1108; BF1108R
FEATURES Specially designed for low loss RF switchingto1 GHz.
APPLICATIONS Various RF switching applications such as: Passive loop through for VCR tuner Transceiver switching.
DESCRIPTIONThese switches are a combination of a depletion type
field-effect transistor and a bandswitching diode in an
SOT143B (BF1108) or SOT143R (BF1108R) package.
The low loss and high isolation capabilities of these
devices provide excellent RF switching functions. The
gateof the MOSFET canbe isolated from ground with the
diode, resulting in low losses. Integrated diodes between
gate and source and between gate and drain protect
against excessive input voltage surges.
PINNING
Note Drain and source are interchangeable.
QUICK REFERENCE DATA
Philips Semiconductors Product specification
Silicon RF switches BF1108; BF1108R
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note Soldering point of FET gate and diode anode lead.
STATIC CHARACTERISTICS =25 °C unless otherwise specified.
Philips Semiconductors Product specification
Silicon RF switches BF1108; BF1108R
DYNAMIC CHARACTERISTICSCommon cathode; Tamb =25 °C.
Notes IF= diode forward current. Cic is the series connection of Csg and Cgc; Coc is the series connection of Cdg and Cgc. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
Philips Semiconductors Product specification
Silicon RF switches BF1108; BF1108R
Philips Semiconductors Product specification
Silicon RF switches BF1108; BF1108R
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads SOT143B
