BF1105R ,N-channel dual-gate MOSFETFEATURES PINNING Short channel transistor with high PIN DESCRIPTIONhandbook, 2 columns 3 4forward ..
BF1105WR ,N-channel dual-gate MOSFET
BF1105WR ,N-channel dual-gate MOSFETapplications with 5 V supply voltage, such as television tuners and professional communications equ ..
BF1107 ,MOSFET N-channel switching transistorLimiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter C ..
BF1108 ,Silicon RF switchesLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER MIN ..
BF1108R ,Silicon RF switches
BR24L08FV-W , 1024×8 bit electrically erasable PROM
BR24L08NUX-WTR , High Reliability Series EEPROMs I2C BUS
BR24L08-W , High Reliability Series EEPROMs I2C BUS
BR24L16FVM-WTR , High Reliability Series EEPROMs I2C BUS
BR24L16FVT-WE2 , High Reliability Series EEPROMs I2C BUS
BR24L16FV-W , I2C BUS 16Kbit (2,048 x 8bit) EEPROM
BF1105R-BF1105WR
N-channel dual-gate MOSFET
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1105; BF1105R;
BF1105WR
FEATURES Short channel transistor with high
forward transfer admittance to input
capacitance ratio Low noise gain controlled amplifier
up to 1 GHz. Internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.
APPLICATIONS VHF and UHF applications with 5V
supply voltage, such as television
tuners and professional
communications equipment.
DESCRIPTIONEnhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1105,
BF1105R and BF1105WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
PINNING
QUICK REFERENCE DATA
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1105; BF1 105R; BF1105WR
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1105; BF1 105R; BF1105WR
THERMAL CHARACTERISTICS
Note Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS =25 C unless otherwise specified.
DYNAMIC CHARACTERISTICSCommon source; Tamb =25 C; VG2-S =4V; VDS=5 V; self-biasing current; unless otherwise specified.
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1105; BF1 105R; BF1105WR
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1105; BF1 105R; BF1105WR
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1105; BF1 105R; BF1105WR
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1105; BF1 105R; BF1105WR
