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BF1102NXPN/a9000avaiN-channel dual-gate MOSFET
BF1102RNXP/PHILIPSN/a19900avaiN-channel dual-gate MOSFET


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BF1102-BF1102R
N-channel dual-gate MOSFET

NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FETs BF1102; BF1102R
FEATURES
Two low noise gain controlled amplifiers in a single
package Specially designed for 5 V applications Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance
ratio.
APPLICATIONS

Gain controlled low noise amplifier for VHF and UHF
applications such as television tuners and professional
communications equipment.
DESCRIPTION

The BF1102 and BF1102R are both two equal dual gate
MOS-FETs which have a shared source pin and a shared
gate 2 pin. Both devices have interconnected source and
substrate; an internal bias circuit enables DC stabilization
and a very good cross-modulation performance at 5V
supply voltage; integrated diodes between the gates and
source protect against excessive input voltage surges.
Both devices have a SOT363 micro-miniature plastic
package.
QUICK REFERENCE DATA
Note
Ts is the temperature at the soldering point of the source lead.
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FETs BF1102; BF1102R
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FETs BF1102; BF1102R
STATIC CHARACTERISTICS
=25 C unless otherwise specified.
Note
RG1 connects gate 1 to VGG =5V.
DYNAMIC CHARACTERISTICS

Common source; Tamb =25 C; VG2-S =4V; VDS =5V; ID=15 mA; unless otherwise specified.
Notes
Not used MOS-FET: VG1-S =0; VDS =0. Gate 2 capacitance of both MOS-FETs. Measured in test circuit of Fig.20.
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FETs BF1102; BF1102R
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FETs BF1102; BF1102R
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FETs BF1102; BF1102R
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