BF1101WR ,N-channel dual-gate MOSFETLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BF1102 ,N-channel dual-gate MOSFETLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER C ..
BF1102R ,N-channel dual-gate MOSFETapplications1 gate 1 (1) gate 1 (1) Superior cross-modulation performance during AGC2 gate 2 (1 an ..
BF1105 ,N-channel dual-gate MOSFET
BF1105R ,N-channel dual-gate MOSFETFEATURES PINNING Short channel transistor with high PIN DESCRIPTIONhandbook, 2 columns 3 4forward ..
BF1105WR ,N-channel dual-gate MOSFET
BR24L04-W , High Reliability Series EEPROMs I2C BUS
BR24L08FJ-WE2 , High Reliability Series EEPROMs I2C BUS
BR24L08FV-W , 1024×8 bit electrically erasable PROM
BR24L08NUX-WTR , High Reliability Series EEPROMs I2C BUS
BR24L08-W , High Reliability Series EEPROMs I2C BUS
BR24L16FVM-WTR , High Reliability Series EEPROMs I2C BUS
BF1101WR
N-channel dual-gate MOSFET
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1101; BF1101R;
BF1101WR
FEATURES Short channel transistor with high
forward transfer admittance to input
capacitance ratio Low noise gain controlled amplifier
up to 1 GHz Partly internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.
APPLICATIONS VHF and UHF applications with to7 V supply voltage, such as
television tuners and professional
communications equipment.
DESCRIPTIONEnhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1101,
BF1101R and BF1101WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
PINNING
QUICK REFERENCE DATA
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1101; BF1 101R; BF1101WR
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note Ts is the temperature of the soldering point of the source lead.
THERMAL CHARACTERISTICS
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1101; BF1 101R; BF1101WR
STATIC CHARACTERISTICS =25 C unless otherwise specified.
Note RG1 connects G1 to VGG=5 V; see Fig.21.
DYNAMIC CHARACTERISTICSCommon source; Tamb =25 C; VG2-S =4V; VDS =5V; ID=12 mA; unless otherwise specified.
Note Measured in test circuit of Fig.21.
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1101; BF1 101R; BF1101WR
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1101; BF1 101R; BF1101WR
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1101; BF1 101R; BF1101WR
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1101; BF1 101R; BF1101WR
