BF1100R ,Dual-gate MOS-FETsapplications such as television tuners andPIN SYMBOL DESCRIPTIONprofessional communications equipme ..
BF1100R ,Dual-gate MOS-FETsAPPLICATIONSPINNING• VHF and UHF
BF1100R ,Dual-gate MOS-FETsFEATURES and substrate interconnected and an internal bias circuit toensure good cross-modulation p ..
BF1100R ,Dual-gate MOS-FETsDISCRETE SEMICONDUCTORSDATA SHEETBF1100; BF1100RDual-gate MOS-FETs1995 Apr 25Product specificationFi ..
BF1100WR ,Dual-gate MOS-FETapplications such as television tuners andprofessional communications equipment.34DESCRIPTIONg2Enha ..
BF1100WR ,Dual-gate MOS-FET
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BF1100-BF1100 R-BF1100R
Dual-gate MOS-FETs
Philips Semiconductors
Philips Semiconductors Product specification
Dual-gate MOS-FETs BF1100; BF1100R
FEATURES Specially designed for use at 9 to 12 V supply voltage Short channel transistor with high forward transfer
admittance to input capacitance ratio Low noise gain controlled amplifier up to 1 GHz Superior cross-modulation performance during AGC.
APPLICATIONS VHF and UHF applications such as television tuners and
professional communications equipment.
DESCRIPTIONEnhancement type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
transistor consists of an amplifier MOS-FET with source
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
PINNING
QUICK REFERENCE DATA
Philips Semiconductors Product specification
Dual-gate MOS-FETs BF1100; BF1100R
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
Note Device mounted on a printed-circuit board.
Philips Semiconductors Product specification
Dual-gate MOS-FETs BF1100; BF1100R
THERMAL CHARACTERISTICS
Notes Device mounted on a printed-circuit board. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS =25 °C; unless otherwise specified.
Notes RG1 connects gate 1 to VGG=9 V; see Fig.27. RG1 connects gate 1 to VGG=12 V; see Fig.27.
Philips Semiconductors Product specification
Dual-gate MOS-FETs BF1100; BF1100R
DYNAMIC CHARACTERISTICSCommon source; Tamb =25 °C; VG2-S=4 V; ID=10 mA; unless otherwise specified.
Philips Semiconductors Product specification
Dual-gate MOS-FETs BF1100; BF1100R
Philips Semiconductors Product specification
Dual-gate MOS-FETs BF1100; BF1100R
