BF1009S ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)BF1009S...Silicon N_Channel MOSFET Tetrode• For low noise, high gain controlled input stage up to ..
BF1012 , Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
BF1012 , Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
BF1012S ,Silicon N-Channel MOSFET TetrodeBF1012SSilicon N-Channel MOSFET Tetrode3
BF1009S
RF-MOSFET
BF1009S...
Silicon N_Channel MOSFET Tetrode• For low noise, high gain controlled
input stage up to 1 GHz
• Operating voltage 9 V
• Integrated biasing network
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Note:
BF1009S...
Thermal Resistance
Electrical Characteristics
DC CharacteristicsFor calculation of RthJA please refer to Application Note Thermal Resistance
BF1009S...
Electrical Characteristics
AC Characteristics (verified by random sampling)
BF1009S...
Total power dissipation Ptot = ƒ(TS)
BF1009S, BF1009SR
20
40
60
80
100
120
140
160
180
220
tot
Total power dissipation Ptot = ƒ(TS)
BF1009SW
20
40
60
80
100
120
140
160
180
220
tot
Drain current ID = ƒ(VG2S)
10
11
12
Insertion power gain21|² = ƒ(VG2S)
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
BF1009S...
Forward transfer admittance21| = ƒ(VG2S)
10
12
14
16
18
20
22
24
Gate 1 input capacitance Cg1ss= ƒ(Vg2s)
f = 200MHz
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
2.4
g1ss
Output capacitance Cdss = ƒ(VG2S)
f = 200MHz
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
2.4
dss
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