BF1005S ,RF-MOSFETBF1005S...Silicon N-Channel MOSFET Tetrode• For low noise, high gain controlled input stages up t ..
BF1005SR ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BF1005SR ,RF-MOSFETCharacteristics12 - - VDrain-source breakdown voltage V(BR)DSI = 650 µA, V = 0 , V = 0 D G1S G2S8 - ..
BF1009 ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
BF1009 ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
BF1009S ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)BF1009S...Silicon N_Channel MOSFET Tetrode• For low noise, high gain controlled input stage up to ..
BR24L01AF-W , 128×8 bit electrically erasable PROM
BR24L02FJ-WE2 , High Reliability Series EEPROMs I2C BUS
BR24L02FV-W , 256×8 bit electrically erasable PROM
BR24L02-W , High Reliability Series EEPROMs I2C BUS
BR24L02-W , High Reliability Series EEPROMs I2C BUS
BR24L04-W , High Reliability Series EEPROMs I2C BUS
BF1005S-BF1005SR
RF-MOSFET
BF1005S...
Silicon N-Channel MOSFET Tetrode• For low noise, high gain controlled
input stages up to 1 GHz
• Operating voltage 5 V
• Integrated biasing network
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Maximum Ratings
Note:
BF1005S...
Thermal Resistance
Electrical Characteristics
DC CharacteristicsFor calculation of RthJA please refer to Application Note Thermal Resistance
BF1005S...
Electrical Characteristics
AC Characteristics (verified by random sampling)
BF1005S...
Total power dissipation Ptot = ƒ(TS)
BF1005S, BF1005SR
20
40
60
80
100
120
140
160
180
220
tot
Total power dissipation Ptot = ƒ(TS)
BF1005SW
20
40
60
80
100
120
140
160
180
220
tot
Drain current ID = ƒ(VG2S)0.511.522.533.5
10
12
14
16
20
Insertion power gain21|² = ƒ(VG2S)
-65
-55
-45
-35
-25
-15
-5
15
BF1005S...
Forward transfer admittance21| = ƒ(VG2S)
12
16
20
24
28
32
40
Gate 1 input capacitance Cg1ss= ƒ(Vg2s)
f = 200MHz
0.5
1.5
g1ss
Output capacitance Cdss = ƒ(VG2S)
f = 200MHz
0.5
1.5
dss
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