BF1005R ,RF-MOSFETBF1005...Silicon N-Channel MOSFET Tetrode• For low noise, high gain controlled input stages up to ..
BF1005S ,RF-MOSFETBF1005S...Silicon N-Channel MOSFET Tetrode• For low noise, high gain controlled input stages up t ..
BF1005SR ,RF-MOSFETCharacteristicsParameter Symbol Values Unitmin. typ. max.DC
BF1005SR ,RF-MOSFETCharacteristics12 - - VDrain-source breakdown voltage V(BR)DSI = 650 µA, V = 0 , V = 0 D G1S G2S8 - ..
BF1009 ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
BF1009 ,Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network
BR24L01AF-W , 128×8 bit electrically erasable PROM
BR24L02FJ-WE2 , High Reliability Series EEPROMs I2C BUS
BR24L02FV-W , 256×8 bit electrically erasable PROM
BR24L02-W , High Reliability Series EEPROMs I2C BUS
BR24L02-W , High Reliability Series EEPROMs I2C BUS
BR24L04-W , High Reliability Series EEPROMs I2C BUS
BF1005R
RF-MOSFET
BF1005...
Silicon N-Channel MOSFET Tetrode• For low noise, high gain controlled
input stages up to 1 GHz
• Operating voltage 5V
• Integrated biasing network
ESD: Electrostatic discharge sensitive device, observe handling precaution!* on request only
Maximum Ratings
BF1005...
Thermal Resistance
Electrical Characteristics
DC CharacteristicsFor calculation of RthJA please refer to Application Note Thermal Resistance
BF1005...
Electrical Characteristics
AC Characteristics (verified by random sampling)
BF1005...
Total power dissipation Ptot = ƒ(TS)
BF1005, BF1005R
20
40
60
80
100
120
140
160
180
220
tot
Total power dissipation Ptot = ƒ(TS)
BF1005W
20
40
60
80
100
120
140
160
180
220
tot
Drain current ID = ƒ(VG2S)
10
12
Insertion power gain21|² = ƒ(VG2S)
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
10
BF1005...
Forward transfer admittance21| = ƒ(VG2S)
10
12
14
16
18
20
22
26
Gate 1 input capacitance Cg1ss= ƒ(Vg2s)
f = 200MHz
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
2.4
g1ss
Output capacitance Cdss = ƒ(VG2S)
f = 200MHz
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
2.4
dss
:
www.ic-phoenix.com
.
