BDX53 ,NPN Epitaxial Silicon TransistorApplications Power Darlington TR Complement to BDX54, BDX54A, BDX54B and BDX54C respectivelyTO-22 ..
BDX53A ,NPN Epitaxial Silicon TransistorApplications Power Darlington TR Complement to BDX54, BDX54A, BDX54B and BDX54C respectivelyTO-22 ..
BDX53B ,NPN Epitaxial Silicon TransistorBDX53B / BDX53CBDX54B / BDX54C®COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS■ STMicroelectroni ..
BDX53B. ,NPN Epitaxial Silicon TransistorAPPLICATIONS ■ AUDIO AMPLIFIERS ■ LINEAR AND SWI ..
BDX53B.. ,NPN Epitaxial Silicon TransistorAPPLICATIONS ■ AUDIO AMPLIFIERS ■ LINEAR AND SWI ..
BDX53BFP ,SILICON POWER DARLINGTON TRANSISTORAPPLICATIONS: ■ GENERAL PURPOSE SWITCHING ANDAMPL ..
BR210 , MINI SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
BR211-140 ,Breakover diodes
BR211-140 ,Breakover diodes
BR211-160 ,Breakover diodes
BR211-200 ,Breakover diodes
BR211-200 ,Breakover diodes
BDX53
NPN Epitaxial Silicon Transistor
BDX53/A/B/C BDX53/A/B/C Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Power Darlington TR Complement to BDX54, BDX54A, BDX54B and BDX54C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : BDX53 45 V CBO : BDX53A 60 V : BDX53B 80 V : BDX53C 100 V V Collector-Emitter Voltage : BDX53 45 V CEO : BDX53A 60 V : BDX53B 80 V : BDX53C 100 V V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 8 A C I *Collector Current (Pulse) 12 A CP I Base Current 0.2 A B P Collector Dissipation (T =25°C) 60 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : BDX53 I = 100mA, I = 0 45 V C B : BDX53A 60 V : BDX53B 80 V : BDX53C 100 V I Collector Cut-off Current : BDX53 V = 45V, I = 0 200 μA CBO CB E : BDX53A V = 60V, I = 0 200 μA CB E : BDX53B V = 80V, I = 0 200 μA CB E : BDX53C V = 100V, I = 0 200 μA CB E I Collector Cut-off Current : BDX53 V = 22V, I = 0 500 μA CEO CE B : BDX53A V = 30V, I = 0 500 μA CE B : BDX53B V = 40V, I = 0 500 μA CE B : BDX53C V = 50V, I = 0 500 μA CE B I Emitter Cut-off Current V = 5V, I = 0 2 mA EBO EB C h * DC Current Gain V = 3V, I = 3A 750 FE CE C V (sat) * Collector-Emitter Saturation Voltage I = 3A, I = 12mA 2 V CE C B V (sat) * Base-Emitter Saturation Voltage I = 3A, I = 12mA 2.5 V BE C B V * Parallel Diode Forward Voltage I = 3A 1.8 2.5 V F F I = 8A 2.5 V F * Pulse Test: PW=300μs, duty Cycle =1.5% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000
