BDX34A ,PNP Epitaxial Silicon TransistorBDX34/A/B/CBDX34/A/B/CPower Linear and Switching
BDX34A ,PNP Epitaxial Silicon TransistorApplications High Gain General Purpose Power Darlington TR Complement to BDX33/33A/33B/33C resp ..
BDX34B ,PNP Epitaxial Silicon TransistorON SemiconductorNPNDarlington ComplementaryBDX33BSilicon Power Transistors*BDX33C...designed for g ..
BDX34B. ,PNP Epitaxial Silicon TransistorBDX33B BDX33CBDX34B BDX34C®COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORSDESCRIPTION ..
BDX34B.. ,PNP Epitaxial Silicon TransistorBDX33B BDX33CBDX34B BDX34C®COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORSDESCRIPTION ..
BDX34C ,PNP Epitaxial Silicon TransistorBDX33B BDX33CBDX34B BDX34C®COMPLEMENTARY SILICON POWERDARLINGTON TRANSISTORSDESCRIPTION ..
BR1101F , Single Color Right Angle Type (3.0 X 2.0 mm)
BR1101F , Single Color Right Angle Type (3.0 X 2.0 mm)
BR1102W , Outer Dimension 3.0 x 1.5 x 1.5mm
BR210 , MINI SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
BR211-140 ,Breakover diodes
BR211-140 ,Breakover diodes
BDX34A
PNP Epitaxial Silicon Transistor
BDX34/A/B/C BDX34/A/B/C Power Linear and Switching Applications High Gain General Purpose Power Darlington TR Complement to BDX33/33A/33B/33C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage CBO : BDX34 - 45 V : BDX34A - 60 V : BDX34B - 80 V : BDX34C - 100 V V Collector-Emitter Voltage CEO : BDX34 - 45 V : BDX34A - 60 V : BDX34B - 80 V : BDX34C - 100 V I Collector Current (DC) - 10 A C I *Collector Current (Pulse) - 15 A CP I Base Current - 0.25 A B P Collector Dissipation (T =25°C) 70 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG ©2000 Fairchild Semiconductor International Rev. A, February 2000
