BDX33B ,NPN Epitaxial Silicon Transistor3BDX33B BDX33C BDX34B BDX34C1.00.7D = 0.50.50.30.20.20.1P(pk)0.050.1R (t) = r(t) RθJC θJCR = 1.92 ° ..
BDX33C ,NPN Epitaxial Silicon TransistorELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
BDX33CG , Darlington Complementary Silicon Power Transistors
BDX34A ,PNP Epitaxial Silicon TransistorBDX34/A/B/CBDX34/A/B/CPower Linear and Switching
BDX34A ,PNP Epitaxial Silicon TransistorApplications High Gain General Purpose Power Darlington TR Complement to BDX33/33A/33B/33C resp ..
BDX34B ,PNP Epitaxial Silicon TransistorON SemiconductorNPNDarlington ComplementaryBDX33BSilicon Power Transistors*BDX33C...designed for g ..
BR1101F , Single Color Right Angle Type (3.0 X 2.0 mm)
BR1101F , Single Color Right Angle Type (3.0 X 2.0 mm)
BR1102W , Outer Dimension 3.0 x 1.5 x 1.5mm
BR210 , MINI SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
BR211-140 ,Breakover diodes
BR211-140 ,Breakover diodes
BDX33B-BDX33C-BDX34B-BDX34C
NPN Epitaxial Silicon Transistor
Darlington Complementary
Silicon Power T ransistors
...designed for general purpose and low speed switching
applications. High DC Current Gain —
hFE = 2500 (typ.) at IC = 4.0 Collector–Emitter Sustaining Voltage at 100 mAdc
VCEO(sus) = 80 Vdc (min.) — BDX33B, 34B
100 Vdc (min.) — BDX33C, 34C Low Collector–Emitter Saturation Voltage
VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc — BDX33B,
33C/34B, 34C Monolithic Construction with Build–In Base–Emitter Shunt resistors TO–220AB Compact Package
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Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
*ON Semiconductor Preferred Device
