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BDW83CPOWERN/a3avaiLeaded Power Transistor Darlington


BDW83C ,Leaded Power Transistor DarlingtonAPPLICATIONS 3■ LINEAR AND SWITCHING INDUSTRIAL2 ..
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BDW83C
Leaded Power Transistor Darlington
BDW83C
BDW84C

COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS BDW83C IS A STMicroelectronics
PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH DC CURRENT GAIN
APPLICATIONS
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION

The BDW83C is a Silicon Epitaxial-Base NPN
power monolithic Darlington transistor mounted in
Jedec TO-218 plastic package. It is intended for
use in power linear and switching applications.
The complementary type is BDW84C.
December 2002
ABSOLUTE MAXIMUM RATINGS

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THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
∗ Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
For PNP type voltage and current values are negative.
BDW83C / BDW84C

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BDW83C / BDW84C
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. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
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BDW83C / BDW84C

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