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BDW42-BDW47 Fast Delivery,Good Price
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Partno Mfg Dc Qty AvailableDescript
BDW42ONN/a3000avaiDarlington Complementary Silicon Power Transistors
BDW47N/a1avaiTrans Darlington PNP 100V 15A 3-Pin(3+Tab) TO-220AB Rail


BDW42 ,Darlington Complementary Silicon Power TransistorsELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
BDW47 ,Trans Darlington PNP 100V 15A 3-Pin(3+Tab) TO-220AB Rail3r(t) EFFECTIVE TRANSIENTTHERMAL RESISTANCE (NORMALIZED)t, TIME (s) μBDW42* − NPN, BDW46, BDW47* ..
BDW52C , Bipolar PNP Device in a Hermetically sealed TO3
BDW83A , Bipolar NPN Device in a Hermetically sealed TO3
BDW83C ,Leaded Power Transistor DarlingtonAPPLICATIONS 3■ LINEAR AND SWITCHING INDUSTRIAL2 ..
BDW93 ,NPN Epitaxial Silicon TransistorBDW93/A/B/CBDW93/A/B/CHammer Drivers, Audio Amplifiers
BQ-N286RD , 0.28(7.10MM) FOUR DIGIT LED DISPLAY
BQ-N292RD , 7.00mm (0.28") high four digit seven segments display
BR1101F , Single Color Right Angle Type (3.0 X 2.0 mm)
BR1101F , Single Color Right Angle Type (3.0 X 2.0 mm)
BR1102W , Outer Dimension 3.0 x 1.5 x 1.5mm
BR210 , MINI SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER


BDW42-BDW47
Darlington Complementary Silicon Power Transistors
BDW42* - NPN, BDW46,
BDW47* - PNP
Preferred Device

Darlington Complementary
Silicon Power T ransistors
This series of plastic, medium−power silicon NPN and PNP
Darlington transistors are designed for general purpose and low speed
switching applications.
Features
Pb−Free Package is Available** High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc. Collector Emitter Sustaining V oltage @ 30 mAdc:
VCEO(sus) = 80 Vdc (min) − BDW46
100 Vdc (min.) − BDW42/BDW47 Low Collector Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc
3.0 Vdc (max) @ IC = 10.0 Adc Monolithic Construction with Built−In Base Emitter Shunt resistors TO−220AB Compact Package
MAXIMUM RATINGS

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS

**For additional information on our Pb−Free strategy and soldering details,
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