BDP955 ,General Purpose TransistorsCharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 10 mA, I = 0 80 - -BDP951C BBDP ..
BDT30CF , isc Silicon PNP Power Transistors
BDT30CF , isc Silicon PNP Power Transistors
BDT32C , isc Silicon PNP Power Transistors
BDT42C , isc Silicon PNP Power Transistors
BDT61C , isc Silicon NPN Darlington Power Transistors
BQ4845S-A4G4 ,RTC IC W NVSRAM Control, Watchdog Timer, uP Reset, Interrupts and Battery Low Warning 28-SOIC 0 to 70Functional Descriptioninterrupt generation.Figure 1 is a
BQ4845S-A4N ,RTC IC W NVSRAM Control, Watchdog Timer, uP Reset, Interrupts and Battery Low WarningFunctional Descriptioninterrupt generation.Figure 1 is a
BQ4845S-A4NTR ,RTC IC W NVSRAM Control, Watchdog Timer, uP Reset, Interrupts and Battery Low WarningFeatures generates an interrupt warning andThe bq4845 Real-Time Clock is asubsequently a microproce ..
BQ4845S-A4NTRG4 ,RTC IC W NVSRAM Control, Watchdog Timer, uP Reset, Interrupts and Battery Low Warning 28-SOIC Features generates an interrupt warning andThe bq4845 Real-Time Clock is asubsequently a microproce ..
BQ4845YS-A4 ,RTC IC W NVSRAM Control, Watchdog Timer, uP Reset, Interrupts and Battery Low Warning
BQ4845YS-A4 ,RTC IC W NVSRAM Control, Watchdog Timer, uP Reset, Interrupts and Battery Low Warning
BDP953-BDP955
General Purpose Transistors
BDP951 ... BDP955
NPN Silicon AF Power Transistor For AF driver and output stages High collector current High current gain Low collector-emitter saturation voltage Complementary types: BDP952 ... BDP956 (PNP)
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BDP951 ... BDP955
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC Characteristics
AC Characteristics
BDP951 ... BDP955
Total power dissipation Ptot = f (TS)
0.4
0.8
1.2
1.6
2.4
3.2
tot
Permissible Pulse Load RthJS = f (tp)
10 0
-2 10
-1 10 10 10 10 10
thJS
Permissible Pulse Load totmax / PtotDC = f (tp) 0 10 10 10 10
totmax
/ P
totDC
DC current gain hFE = f (IC) CE = 2V 4 10 10 10 10
BDP951 ... BDP955
Collector cutoff current ICBO = f (TA) CB = 45V
-1 10 10 10 10 10 10 10
ICBO
Collector-emitter saturation voltage C = f (VCEsat), hFE = 10
0.010 10 10 10 10
Base-emitter saturation voltage C = f (VBEsat), hFE = 10
0.010 10 10 10 10
Collector current IC = f (VBE) CE = 2V
0.010 10 10 10 10
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