BDP948 ,PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)CharacteristicsCollector-emitter breakdown voltage V V (BR)CEOI = 10 mA, I = 0 45 - -BDP948C B60 ..
BDP948 ,PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)BDP948, BDP950PNP Silicon AF Power Transistors
BDP948-BDP950
General Purpose Transistors
BDP948, BDP950
PNP Silicon AF Power Transistors For AF driver and output stages High collector current High current gain Low collector-emitter saturation voltage Complementary types: BDP947, BDP949 (NPN)
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BDP948, BDP950
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC Characteristics
AC Characteristics
BDP948, BDP950
Permissible Pulse Load RthJS = f (tp)
10 0
-2 10
-1 10 10 10 10 10
thJS
Total power dissipation Ptot = f (TS) 0.4
0.8
1.2
1.6
2.4
3.2
tot
Permissible Pulse Load totmax / PtotDC = f (tp) 0 10 10 10 10
totmax
/ P
totDC
DC current gain hFE = f (IC) CE = 2V 4 10 10 10 10
BDP948, BDP950
Collector-emitter saturation voltage C = f (VCEsat), hFE = 10
0.010 10 10 10 10
Collector cutoff current ICBO = f (TA) CB = 45V
-1 10 10 10 10 10 10 10
ICBO
Base-emitter saturation voltage C = f (VBEsat), hFE = 10
0.010 10 10 10 10
Collector current IC = f (VBE) CE = 2V
0.010 10 10 10 10
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