BD791 ,NPN complementary plastic silicon power transistorTAP , POWER DISSIPATION (WATTS)DOrder this document**by BD791/DSEMICONDUCTOR TECHNICAL DATA** * * * ..
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BQ24010DRCRG4 ,bqTINY(TM) Linear, 1-cell (4.2V) Li-Ion Charger w/ 1-A FET, AC Present and Temp. Sense in QFN/MLP-10features. These include temperature sensing input for• Works With Regulated and Unregulateddetectin ..
BQ24012DRCR ,bqTINY(TM) Linear, 1-cell (4.2V) Li-Ion Charger w/ 1-A FET, AC Present & Charge Enable in QFN/MLP-10This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated cir ..
BQ24012DRCR G4 ,bqTINY(TM) Linear, 1-cell (4.2V) Li-Ion Charger w/ 1-A FET, AC Present & Charge Enable in QFN/MLP-10features. These include temperature sensing input for• Works With Regulated and Unregulateddetectin ..
BQ24012DRCRG4 ,bqTINY(TM) Linear, 1-cell (4.2V) Li-Ion Charger w/ 1-A FET, AC Present & Charge Enable in QFN/MLP-10maximum ratings may cause permanent damage to the device. These are stress ratingsonly, and functio ..
BQ24013DRC ,SINGLE-CHIP/ LI-ION CHARGE MANAGEMENT IC FOR HANDHELD APPLICATIONS (bq TINY)ELECTRICAL CHARACTERISTICS (continued)over 0°C≤ T≤ 125°C and recommended supply voltage, (unless ot ..
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BD791
NPN complementary plastic silicon power transistor
-.. designed for low power audio amplifier and low–current, high speed switchingapplications. High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc
hFE = 40–250 Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc High Current Gain — Bandwidth Product —
fT = 40 MHz (Min) @ IC = 100 mAdc)
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Figure 1. Power DeratingT, TEMPERATURE (°C)
0.8T
, POWER DISSIP
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TTS)
, POWER DISSIP
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Preferred devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD791/D
