BD682STU ,PNP Epitaxial Silicon TransistorApplications• Medium Power Darlington TR • Complement to BD675A, BD677A, BD679A and BD681 respectiv ..
BD6989FVM-TR , Low-voltage Single-phase Full-wave DC Brushless Fan Motor Drivers
BD707 , 75.000W Switching NPN Plastic Leaded Transistor. 60V Vceo, 12.000A Ic, 40BD707/709/711BD708/712® COMPLEMENTARY SILICON POWER TRANSISTORS■ COMPLEMENTARY PNP - NPN DEVICES AP ..
BD708 ,Trans GP BJT PNP 60V 12A 3-Pin(3+Tab) TO-220 TubeBD707/709/711BD708/712® COMPLEMENTARY SILICON POWER TRANSISTORS■ COMPLEMENTARY PNP - NPN DEVICES AP ..
BD709 ,Trans GP BJT NPN 80V 12A 3-Pin(3+Tab) TO-220BD707/709/711BD708/712® COMPLEMENTARY SILICON POWER TRANSISTORS■ COMPLEMENTARY PNP - NPN DEVICES AP ..
BD710 , Silicon PNP Power Transistors
BQ20Z70PWR-V160 ,SBS 1.1-Compliant Gas Gauge Enabled with Impedance Track Technology for use with the bq29330 20-TSSOP -40 to 85Featuresfront-end (AFE) protection IC to maximize– Voltage, Current and Temperaturefunctionality an ..
BQ20Z70PW-V150 ,SBS 1.1-Compliant Gas Gauge Enabled with Impedance Track Technology for use with the bq29330 20-TSSOP -40 to 85SLUS686B–NOVEMBER 2005–REVISED JULY 2007TERMINAL FUNCTIONSTERMINAL(1)I/O DESCRIPTIONNO. NAME1 XALER ..
BQ20Z70PW-V160 ,SBS 1.1-Compliant Gas Gauge Enabled with Impedance Track Technology for use with the bq29330 20-TSSOP -40 to 85FEATURES APPLICATIONS• Notebook PCs• Next Generation Patented Impedance Track™Technology accurately ..
BQ20Z75DBTR-V160 ,SBS 1.1-Compliant Gas Gauge and Protection-Enabled IC with Impedance Track(TM) 38-TSSOP -40 to 85FeaturesThe implemented Impedance Track™ gas gauging– Voltage, Current and Temperature technology c ..
BQ20Z75DBTR-V160 ,SBS 1.1-Compliant Gas Gauge and Protection-Enabled IC with Impedance Track(TM) 38-TSSOP -40 to 85This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated cir ..
BQ20Z75DBTR-V160G4 ,SBS 1.1-Compliant Gas Gauge and Protection-Enabled IC with Impedance Track(TM) 38-TSSOP -40 to 85 SLUS723C –JULY 2007–REVISED JULY 2008TERMINAL FUNCTIONSTERMINAL(1)I/O DESCRIPTIONNO. NAME1 DSG O H ..
BD682STU
PNP Epitaxial Silicon Transistor
BD676A/678A/680A/682 BD676A/678A/680A/682 Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD675A, BD677A, BD679A and BD681 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : BD676A - 45 V CBO : BD678A - 60 V : BD680A - 80 V : BD682 - 100 V V Collector-Emitter Voltage : BD676A - 45 V CEO : BD678A - 60 V : BD680A - 80 V : BD682 - 100 V V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 4 A C I *Collector Current (Pulse) - 6 A CP I Base Current - 100 mA B P Collector Dissipation (T =25°C) 14 W C C R Thermal Resistance (Junction to Ambient) 88 °C/W θja T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) Collector-Emitter Sustaining Voltage CEO : BD676A I = - 50mA, I = 0 - 45 C B : BD678A - 60 : BD680A - 80 : BD682 - 100 I Collector-Base Voltage : BD676A V = - 45V, I = 0 - 200 μA CBO CB E : BD678A V = - 60V, I = 0 - 200 μA CB E : BD680A V = - 80V, I = 0 - 200 μA CB E : BD682 V = - 100V, V = 0 - 200 μA CB BE I Collector Cut-off Current : BD676A V = - 45V, V = 0 - 500 μA CEO CE BE : BD678A V = - 60V, V = 0 - 500 μA CE BE : BD680A V = - 80V, V = 0 - 500 μA CE BE : BD682 V = - 100V, V = 0 - 500 μA CE BE I Emitter Cut-off Current V = - 5V, I = 0 - 2 mA EBO EB C h * DC Current Gain : BD676A/678A/680A V = - 3V, I = - 2A 750 FE CE C : BD682 V = - 3V, I = - 1.5A 750 CE C V (sat) * Collector-Emitter Saturation Voltage CE : BD676A/678A/680A I = - 2A, I = - 40mA - 2.8 V C B : BD682 I = - 1.5A, I = - 30mA - 2.5 V C B V (on) * Base-Emitter On Voltage : BD676A/678A/680A V = - 3V, I = - 2A - 2.5 V BE CE C : BD682 V = - 3V, I = - 1.5A - 2.5 V CE C * Pulse Test: PW=300μs, duty Cycle=1.5% Pulse ©2002 Rev. B, September 2002
