BD677-A-S ,NPN Epitaxial Silicon TransistorBD675A/677A/679A/681BD675A/677A/679A/681Medium Power Linear and Switching
BD678 ,Leaded Power Transistor DarlingtonBD677/A/679/A/681BD678/A/680/A/682®COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS■ STMicroelectr ..
BD678. ,Leaded Power Transistor DarlingtonBD677/A/679/A/681BD678/A/680/A/682®COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS■ STMicroelectr ..
BD678A ,Leaded Power Transistor DarlingtonBD677/A/679/A/681BD678/A/680/A/682®COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS■ STMicroelectr ..
BD679 ,Leaded Power Transistor DarlingtonBD677/A/679/A/681BD678/A/680/A/682®COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS■ STMicroelectr ..
BD679. ,Leaded Power Transistor DarlingtonBD677/A/679/A/681BD678/A/680/A/682®COMPLEMENTARY SILICONPOWER DARLINGTON TRANSISTORS■ STMicroelectr ..
BQ2092SN , Gas Gauge IC with SMBus-Like Interface
BQ2092SN , Gas Gauge IC with SMBus-Like Interface
bq2092SN , Gas Gauge IC with SMBus-Like Interface
BQ2092SN-A309 ,Multi-Chemistry SBS 0.95 Compliant Gas Gauge With 4 LED Drivers
BQ2092SN-A309 ,Multi-Chemistry SBS 0.95 Compliant Gas Gauge With 4 LED Drivers
BQ2092SN-A309TR ,Multi-Chemistry SBS 0.95 Compliant Gas Gauge With 4 LED Drivers
BD677-A-S-BD679AS-BD681S-BD681STU
NPN Epitaxial Silicon Transistor
BD675A/677A/679A/681 BD675A/677A/679A/681 Medium Power Linear and Switching Applications Medium Power Darlington TR Complement to BD676A, BD678A, BD680A and BD682 respectively TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : BD675A 45 V CBO : BD677A 60 V : BD679A 80 V : BD681 100 V V Collector-Emitter Voltage : BD675A 45 V CEO : BD677A 60 V : BD679A 80 V : BD681 100 V V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 4 A C I *Collector Current (Pulse) 6 A CP I Base Current 100 mA B P Collector Dissipation (T =25°C) 40 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) *Collector-Emitter Sustaining Voltage CEO : BD675A I = 50mA, I = 0 45 V C B : BD677A 60 V : BD679A 80 V : BD681 100 V I Collector-Base Voltage : BD675A V = 45V, I = 0 200 μA CBO CB E : BD677A V = 60V, I = 0 200 μA CB E : BD679A V = 80V, I = 0 200 μA CB E : BD681 V = 100V, V = 0 200 μA CB BE I Collector Cut-off Current : BD675A V = 45V, V = 0 500 μA CEO CE BE : BD677A V = 60V, V = 0 500 μA CE BE : BD679A V = 80V, V = 0 500 μA CE BE : BD681 V = 100V, V = 0 500 μA CE BE I Emitter Cut-off Current V = 5V, I = 0 2 mA EBO EB C h * DC Current Gain : BD675A/677A/679A V = 3V, I = 2A 750 FE CE C : BD681 V = 3V, I = 1.5A 750 CE C V (sat) * Collector-Emitter Saturation Voltage CE : BD675A/677A/679A I = 2A, I = 40mA 2.8 V C B : BD681 I = 1.5A, I = 30mA 2.5 V C B V (on) * Base-Emitter ON Voltage : BD675A/677A/679A V = 3V, I = 2A 2.5 V BE CE C : BD681 V = 3V, I = 1.5A 2.5 V CE C * Pulse Test: PW=300μs, duty Cycle=1.5% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000
