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BD676 from PHILIPS

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15.625ms

BD676

Manufacturer: PHILIPS

Leaded Power Transistor Darlington

Partnumber Manufacturer Quantity Availability
BD676 PHILIPS 282 In Stock

Description and Introduction

Leaded Power Transistor Darlington The BD676 is a silicon NPN power transistor manufactured by PHILIPS. Here are its key specifications:  

- **Type**: NPN Darlington transistor  
- **Collector-Emitter Voltage (VCE)**: 60V  
- **Collector-Base Voltage (VCB)**: 60V  
- **Emitter-Base Voltage (VEB)**: 5V  
- **Collector Current (IC)**: 4A  
- **Power Dissipation (Ptot)**: 40W  
- **DC Current Gain (hFE)**: 750 (min) at IC = 2A  
- **Transition Frequency (fT)**: 3MHz  
- **Operating Temperature Range**: -65°C to +150°C  
- **Package**: TO-126  

These specifications are based on PHILIPS' datasheet for the BD676 transistor.

Partnumber Manufacturer Quantity Availability
BD676 MOT 550 In Stock

Description and Introduction

Leaded Power Transistor Darlington The BD676 is a PNP bipolar junction transistor (BJT) manufactured by STMicroelectronics. Below are the key MOT (Ministry of Transport) specifications or relevant technical details:  

- **Type**: PNP Bipolar Transistor  
- **Package**: TO-126  
- **Collector-Emitter Voltage (VCEO)**: -45V  
- **Collector-Base Voltage (VCBO)**: -60V  
- **Emitter-Base Voltage (VEBO)**: -5V  
- **Collector Current (IC)**: -4A  
- **Power Dissipation (Ptot)**: 40W  
- **DC Current Gain (hFE)**: 15 to 75 (depending on operating conditions)  
- **Operating Temperature Range**: -65°C to +150°C  

These specifications are based on STMicroelectronics' datasheet for the BD676 transistor.

Partnumber Manufacturer Quantity Availability
BD676 ON 1500 In Stock

Description and Introduction

Leaded Power Transistor Darlington The BD676 is a PNP bipolar junction transistor (BJT) manufactured by ON Semiconductor. Below are its key specifications:

- **Type**: PNP  
- **Collector-Emitter Voltage (VCEO)**: -80V  
- **Collector-Base Voltage (VCBO)**: -100V  
- **Emitter-Base Voltage (VEBO)**: -5V  
- **Collector Current (IC)**: -4A  
- **Power Dissipation (PD)**: 40W  
- **DC Current Gain (hFE)**: 15 to 60 (at IC = -2A, VCE = -4V)  
- **Transition Frequency (fT)**: 3MHz  
- **Operating Temperature Range**: -65°C to +150°C  
- **Package**: TO-126  

These specifications are based on standard operating conditions. For detailed performance curves and absolute maximum ratings, refer to the official ON Semiconductor datasheet.

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