BD534J ,PNP Epitaxial Silicon TransistorApplications Low Saturation Voltage Complement to BD533, BD535 and BD537 respectivelyTO-22011.Ba ..
BD535 , 50.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 20 hFE.BD533 BD535 BD537BD534 BD536 BD538®COMPLEMENTARY SILICON POWER TRANSISTORS■ BD534, BD535, BD536, BD ..
BD535 , 50.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 20 hFE.
BD535. , 50.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 20 hFE.BD533 BD535 BD537BD534 BD536 BD538®COMPLEMENTARY SILICON POWER TRANSISTORS■ BD534, BD535, BD536, BD ..
BD537. , 50.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE.BD533 BD535 BD537BD534 BD536 BD538®COMPLEMENTARY SILICON POWER TRANSISTORS■ BD534, BD535, BD536, BD ..
BD537J ,NPN Epitaxial Silicon TransistorBD533/535/537BD533/535/537Medium Power Linear and Switching
BQ2011KSN-D121 , GAS GAUGE FOR HIGH DISCHARGE RATES ()5A), SMALL PACK CAPACITIES ((2AH), (5 MOHM SENSE RESISTOR WITH
BQ2011SN-D118 ,NiCd Gas Gauge For High Discharge Rates (>5A), Small Pack Capacities (<2Ah)General Descriptionrectly indicated using a five-seg-➤ Conservative and repeatable The bq2011 Gas G ..
BQ2011SN-D118 ,NiCd Gas Gauge For High Discharge Rates (>5A), Small Pack Capacities (<2Ah)bq2011Gas Gauge IC forHigh Discharge RatesNominal available charge may be di-
BQ2011SN-D118 ,NiCd Gas Gauge For High Discharge Rates (>5A), Small Pack Capacities (<2Ah)bq2011Gas Gauge IC forHigh Discharge RatesNominal available charge may be di-
BQ2011SN-D118TR ,NiCd Gas Gauge For High Discharge Rates (>5A), Small Pack Capacities (<2Ah)General Descriptionrectly indicated using a five-seg-➤ Conservative and repeatable The bq2011 Gas G ..
BQ2012 ,NiCd/NiMH Gas Gauge With 1-Wire (DQ) Interface, 5 LED Drivers And Slow-Charge ControlNot Recommended For New Designsbq2012Gas Gauge IC WithSlow-Charge Controlmeans of controlling charg ..
BD534J
PNP Epitaxial Silicon Transistor
BD534/536/538 BD534/536/538 Medium Power Linear and Switching Applications Low Saturation Voltage Complement to BD533, BD535 and BD537 respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : BD534 - 45 V CBO : BD536 - 60 V : BD538 - 80 V V Collector-Emitter Voltage : BD534 - 45 V CEO : BD536 - 60 V : BD538 - 80 V V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 8 A C I Base Current - 1 A B P Collector Dissipation (T =25°C) 50 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current : BD534 V = - 45V, I = 0 - 100 μA CBO CB E : BD536 V = - 60V, I = 0 - 100 μA CB E : BD538 V = - 80V, I = 0 - 100 μA CB E I Collector Cut-off Current : BD534 V = - 45V, V = 0 - 100 μA CES CE BE : BD536 V = - 60V, V = 0 - 100 μA CE BE : BD538 V = - 80V, V = 0 - 100 μA CE BE I Emitter Cut-off Current V = - 5V, I = 0 - 1 mA EBO EB C h * DC Current Gain : ALL DEVICE V = -2 V, I = - 500mA 40 FE CE C : BD534/536 V = - 5V, I = - 10mA 20 CE C : BD538 15 : BD534/536 V = - 2V, I = - 2A 25 CE C : BD538 15 h h Groups FE FE J : ALL DEVICE V = - 2V, I = - 2A 30 75 CE C V = - 2V, I = - 3A 15 CE C K : ALL DEVICE V = -2V, I = - 2A 40 100 CE C V = - 2V, I = - 3A 20 CE C V (sat) * Collector-Emitter Saturation Voltage I = - 2A, I = - 0.2A - 0.8 V CE C B I = - 6A, I = - 0.6A - 0.8 V C B V (on) * Base-Emitter ON Voltage V = - 2V, I = - 2A - 1.5 V BE CE C f Current Gain Bandwidth Product V = - 1V, I = - 500mA 3 12 MHz T CE C * Pulse Test: PW =300μs, duty Cycle =1.5% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000
