BD438S ,PNP Epitaxial Silicon TransistorApplications• Complement to BD433, BD435 and BD437 respectivelyTO-12611. Emitter 2.Collector ..
BD438S ,PNP Epitaxial Silicon TransistorApplications• Complement to BD433, BD435 and BD437 respectivelyTO-12611. Emitter 2.Collector ..
BD438-S ,PNP Epitaxial Silicon TransistorBD434/436/438BD434/436/438Medium Power Linear and Switching
BD440 ,Leaded Power Transistor General PurposeBD439/BD440® BD441/BD442COMPLEMENTARY SILICON POWER TRANSISTORS ..
BD440 ,Leaded Power Transistor General Purpose2BD436, BD438, BD440, BD4422.01.6I = 10 mA 100 mA 1.0 A 3.0 AC1.20.8T =J255C0.400.050.070.1 0.2 0.3 ..
BD440S ,PNP Epitaxial Silicon TransistorApplications• Complement to BD439, BD441 respectivelyTO-1261PNP Epitaxial Silicon Transistor1. Emit ..
BPNGA16E , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA
BPNGA16E-TR , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA
BPNGA16P , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA
BPNPA16P , Quad Differential Drivers BDG1A, BDP1A, BDGLA, BPNGA, BPNPA, and BPPGA
BPV10 ,Silicon PIN Photodiode Document Number 815024 (5) Rev. 3, 20-May-99BPV10Vishay SemiconductorsOzone Depleting Substances P ..
BPV10NF ,High Speed Silicon PIN Photodiode Document Number 815034 (5) Rev. 2, 20-May-99BPV10NFVishay SemiconductorsOzone Depleting Substances ..
BD434S-BD436STU-BD438S-BD438-S
PNP Epitaxial Silicon Transistor
BD434/436/438 BD434/436/438 Medium Power Linear and Switching Applications • Complement to BD433, BD435 and BD437 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage CBO : BD434 - 22 V : BD436 - 32 V : BD438 - 45 V V Collector-Emitter Voltage CES : BD434 - 22 V : BD436 - 32 V : BD438 - 45 V V Collector-Emitter Voltage CEO : BD434 - 22 V : BD436 - 32 V : BD438 - 45 V V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 4 A C I *Collector Current (Pulse) - 7 A CP I Base Current - 1 A B P Collector Dissipation (T =25°C) 36 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG ©2001 Rev. A1, June 2001
