BD380 ,PNP Epitaxial Silicon TransistorApplications Complement to BD375, BD377 and BD379 respectivelyTO-1261PNP Epitaxial Silicon Transis ..
BD3801FS , SCF built-in sound processor for car audio
BD3801FS , SCF built-in sound processor for car audio
BD3805F , SCF built-in sound processor for car audio
BD3812F , 2ch Electronic Volume
BD3812F-E2 , 2ch Electronic Volume
BP5035A12 , AC100V input, −12V/200mA output
BP5035A12 , AC100V input, −12V/200mA output
BP5039B12 , AC100V input, 12V/300mA output
BP5045A , Non-Isolated AC/DC Converter
BP5053-12 , Non-isolated AC/DC converter
BP5055-12 , Non-Isolated AC/DC Converter
BD380
PNP Epitaxial Silicon Transistor
BD376/378/380 BD376/378/380 Medium Power Linear and Switching Applications Complement to BD375, BD377 and BD379 respectively TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : BD376 - 50 V CBO : BD378 - 75 V : BD380 - 100 V V Collector-Emitter Voltage : BD376 - 45 V CEO : BD378 - 60 V : BD380 - 80 V V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 2 A C I *Collector Current (Pulse) - 3 A CP I Base Current - 1 A B P Collector Dissipation (T =25°C) 25 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) *Collector-Emitter Sustaining Voltage CEO : BD376 I = - 100mA, I = 0 - 45 V C B : BD378 - 60 V : BD380 - 80 V BV Collector-Base : BD376 I = - 100μA, I = 0 - 50 V CBO C E Breakdown Voltage : BD378 - 75 V : BD380 - 100 V I Collector Cut-off Current : BD376 V = - 45V, I = 0 - 2 μA CBO CB E : BD378 V = - 60V, I = 0 - 2 μA CB E : BD380 V = - 80V, I = 0 - 2 μA CB E I Emitter Cut-off Current V = - 5V, I = 0 - 100 μA EBO EB C h *DC Current Gain V = - 2V, I = - 0.15A 40 375 FE1 CE C h V = - 2V, I = - 1A 20 FE2 CE C V (sat) *Collector-Emitter Saturation Voltage I = - 1A, I = - 0.1A - 1 V CE C B V (on) *Base-Emitter ON Voltage V = - 2V, I = -1A - 1.5 V BE CE C t Turn ON Time V = - 30V, I = - 0.5A 50 ns ON CC C I = - I = - 0.05A t Turn OFF Time B1 B2 500 ns OFF R = 60Ω L * Pulse Test: PW=350μs, duty Cycle=2% Pulsed h Classificntion FE Classification 6 101625 h 40 ~ 100 63 ~ 160 100 ~ 250 150 ~ 375 FE1 ©2000 Fairchild Semiconductor International Rev. A, February 2000
