BD241C ,COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSSELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CCharacteristic Symbol Min Max UnitOFF ..
BD242 ,COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS
BD2425N50200A00 , Ultra Low Profile 0404 Balun 50Ω to 200Ω Balanced
BD2425N5075A00 , Ultra Low Profile 0404 Balun 50Ω to 75Ω Balanced
BD242A ,COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSSBD241A/B/CBD242A/B/C®COMPLEMENTARY SILICON POWER TRANSISTORS■ STMicroelectronics PREFERREDSALESTYPE ..
BD242A ,COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS
BNX022-01L , Block Type EMIFILr LC Combined Type
BP 104S , Neu: Silizium-PIN-Fotodiode, New: Silicon PIN Photodiode
BP04KE , Side Actuated DIP Switcehs
BP04KT , Side Actuated DIP Switcehs
BP103 , NPN-Silizium-Fototransistor Silicon NPN Phototransistor
BP103-2 , NPN-Silizium-Fototransistor Silicon NPN Phototransistor
BD241C-BD242B
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS
BD241C* (NPN),
BD242B (PNP),
BD242C* (PNP)
*Preferred DevicesComplementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications. Collector−Emitter Saturation V oltage −
VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc Collector−Emitter Sustaining Voltage −
VCEO(sus) = 100 Vdc (Min) BD241C, BD242C High Current Gain − Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO−220 AB Package Epoxy Meets UL94, V−0 @ 0.125 in. ESD Ratings: Human Body Model, 3B � 8000 V
Machine Model, C � 400 V
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