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BD241BTU
NPN Epitaxial Silicon Transistor
BD241/A/B/C BD241/A/B/C Medium Power Linear and Switching Applications Complement to BD242/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage CEO : BD241 45 V : BD241A 60 V : BD241B 80 V : BD241C 100 V V Collector-Emitter Voltage CER : BD241 55 V : BD241A 70 V : BD241B 90 V : BD241C 115 V V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 3 A C I *Collector Current (Pulse) 5 A CP I Base Current 1 A B P Collector Dissipation (T =25°C) 40 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : BD241 I = - 30mA, I = 0 45 V C B : BD241A 60 V : BD241B 80 V : BD241C 100 V I Collector Cut-off Current : BD241/A V = 30V, I = 0 0.3 mA CEO CE B : BD241B/C V = 60V, I = 0 0.3 mA CE B I Collector Cut-off Current : BD241 V = 45V, V = 0 0.2 mA CES CE BE : BD241A V = 60V, V = 0 0.2 mA CE BE : BD241B V = 80V, V = 0 0.2 mA CE BE : BD241C V = 100V, V = 0 0.2 mA CE BE I Emitter Cut-off Current V = 5V, I = 0 1 mA EBO EB C h * DC Current Gain V = 4V, I = 1A 25 FE CE C V = 4V, I = 3A 10 CE C V (sat) * Collector-Emitter Saturation Voltage I = 3A, I = 0.6A 1.2 V CE C B V (on) * Base-Emitter ON Voltage V = 4V, I = 3A 1.8 V BE CE C * Pulse Test: PW=350μs, duty Cycle≤2% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000
