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BD240BTUFAIRCHILDN/a83avaiPNP Epitaxial Silicon Transistor


BD240BTU ,PNP Epitaxial Silicon TransistorApplications Complement to BD239/A/B/C respectivelyTO-22011.Base 2.Collector 3.EmitterPNP Ep ..
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BD240BTU
PNP Epitaxial Silicon Transistor
BD240/A/B/C BD240/A/B/C Medium Power Linear and Switching Applications  Complement to BD239/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage CEO : BD240 - 45 V : BD240A - 60 V : BD240B - 80 V : BD240C - 100 V V Collector-Emitter Voltage CER : BD240 - 55 V : BD240A - 70 V : BD240B - 90 V : BD240C - 115 V V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 2 A C I *Collector Current (Pulse) - 4 A CP I Base Current - 0.6 A B P Collector Dissipation ( T =25°C) 30 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : BD240 I = - 30mA, I = 0 - 45 V C B : BD240A - 60 V : BD240B - 80 V : BD240C - 100 V I Collector Cut-off Current : BD240/A V = - 30V, I = 0 - 0.3 mA CEO CE B : BD240B/C V = - 60V, I = 0 - 0.3 mA CE B I Collector Cut-off Current : BD240 V = - 45V, V = 0 - 0.2 mA CES CE BE : BD240A V = - 60V, V = 0 - 0.2 mA CE BE : BD240B V = - 80V, V = 0 - 0.2 mA CE BE : BD240C V = - 100V, V = 0 - 0.2 mA CE BE I Emitter Cut-off Current V = - 5V, I = 0 - 1 mA EBO EB C h * DC Current Gain V = - 4V,I = - 0.2A 40 FE CE C V = - 4V, I = - 1A 15 CE C V (sat) * Collector-Emitter Saturation Voltage I = - 1A , I = - 0.2A - 0.7 V CE C B V (on) * Base-Emitter ON Voltage V = - 4V, I = - 1A - 1.3 V BE CE C * Pulse Test: PW=350μs, duty Cycle≤2.0% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000
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