BD239ATU ,NPN Epitaxial Silicon TransistorApplications Complement to BD240/A/B/C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Ep ..
BD239C , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.BD239C®NPN SILICON POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPEDESCRIPTION ..
BD239C , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.BD239C®NPN SILICON POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPEDESCRIPTION ..
BD239C , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.BD239C®NPN SILICON POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPEDESCRIPTION ..
BD239C , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.BD239C®NPN SILICON POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPEDESCRIPTION ..
BD239C. , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.
BNX003-01 , SMD/BLOCK Type EMI Suppression Filters
BNX005-01 , SMD/BLOCK Type EMI Suppression Filters
BNX005-01 , SMD/BLOCK Type EMI Suppression Filters
BNX012-01 , SMD/BLOCK Type EMI Suppression Filters
BNX012H01 , DESIGN ENGINEERING KITS
BNX022-01L , Block Type EMIFILr LC Combined Type
BD239ATU-BD239CTU
NPN Epitaxial Silicon Transistor
BD239/A/B/C BD239/A/B/C Medium Power Linear and Switching Applications Complement to BD240/A/B/C respectively TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage CEO : BD239 45 V : BD239A 60 V : BD239B 80 V : BD239C 100 V V Collector-Emitter Voltage CER : BD239 55 V : BD239A 70 V : BD239B 90 V : BD239C 115 V V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 2 A C I *Collector Current (Pulse) 4 A CP I Base Current 0.6 A B P Collector Dissipation (T =25°C) 30 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) *Collector-Emitter Sustaining Voltage CEO : BD239 I = 30mA, I = 0 45 V C B : BD239A 60 V : BD239B 80 V : BD239C 100 V I Collector Cut-off Current CEO : BD239/A V = 30V, I = 0 0.3 mA CE B : BD239B/C V = 60V, I = 0 0.3 mA CE B I Collector Cut-off Current CES : BD239 V = 45V, V = 0 0.2 mA CE BE : BD239A V = 60V, V = 0 0.2 mA CE BE : BD239B V = 80V, V = 0 0.2 mA CE BE : BD239C V = 100V, V = 0 0.2 mA CE BE I Emitter Cut-off Current V = 5V, I = 0 1 mA EBO EB C h *DC Current Gain V = 4V, I = 0.2A 40 FE CE C V = 4V, I = 1A 15 CE C V (sat) *Collector-Emitter Saturation Voltage I = 1A, I = 0.2A 0.7 V CE C B V (on) *Base-Emitter ON Voltage V = 4V, I = 1A 1.3 V BE CE C * Pulse Test: PW=350μs, duty Cycle≤2.0% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000
