BD238 ,Leaded Power Transistor General PurposeMaximum ratings applied to the device are individual stress limit values (notnormal operating condi ..
BD239ATU ,NPN Epitaxial Silicon TransistorApplications Complement to BD240/A/B/C respectivelyTO-22011.Base 2.Collector 3.EmitterNPN Ep ..
BD239C , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.BD239C®NPN SILICON POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPEDESCRIPTION ..
BD239C , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.BD239C®NPN SILICON POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPEDESCRIPTION ..
BD239C , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.BD239C®NPN SILICON POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPEDESCRIPTION ..
BD239C , 30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE.BD239C®NPN SILICON POWER TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPEDESCRIPTION ..
BNX003-01 , SMD/BLOCK Type EMI Suppression Filters
BNX005-01 , SMD/BLOCK Type EMI Suppression Filters
BNX005-01 , SMD/BLOCK Type EMI Suppression Filters
BNX012-01 , SMD/BLOCK Type EMI Suppression Filters
BNX012H01 , DESIGN ENGINEERING KITS
BNX022-01L , Block Type EMIFILr LC Combined Type
BD237-BD238
Leaded Power Transistor General Purpose
BD237 (NPN), BD238 (PNP)
Preferred DevicesPlastic Medium Power
Silicon NPN T ransistor
Designed for use in 5.0 to 10 W audio amplifiers and drivers
utilizing complementary or quasi complementary circuits. DC Current Gain −
hFE = 40 (Min) @ IC = 0.15 Adc Epoxy Meets UL94, VO @ 1/8″ ESD Ratings: Human Body Model, 3B; >8000 V
Machine Model, C; >400 V
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Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.