BD179 ,Leaded Power Transistor General PurposeBD179®NPN SILICON TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE ■ NPN TRANSISTORAPPLICATION ..
BD179 ,Leaded Power Transistor General Purpose
BD179 ,Leaded Power Transistor General PurposeELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)CÎÎ CharacteristicÎÎÎÎÎÎ SymbolÎÎÎÎ Min ..
BD179. ,Leaded Power Transistor General PurposeBD179®NPN SILICON TRANSISTOR■ STMicroelectronics PREFERREDSALESTYPE ■ NPN TRANSISTORAPPLICATION ..
BD18KA5WF-E2 , 500mA Variable/Fixed Output LDO Regulators Built-in thermal shutdown circuit
BD18KA5WFP-E2 , 500mA Variable/Fixed Output LDO Regulators Built-in thermal shutdown circuit
BN1A3Q ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBN1A3Qon-chip resistor PNP silicon epitaxial transistorFor mid-speed ..
BN1A4M ,The BN1A4M is designed for use in medium speed switching circuit.ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC MIN. TYP. MAX. UNIT
Input Resistance 7.0 ..
BN1A4P ,PNP SILICON TRANSISTORT PNP SILICON TRANSISTOR
BN1A4P
lllhllEiiiiC:
DESCRIPTION The BN1A4P is designed for use i ..
BN1A4Z ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBN1A4Zon-chip resistor PNP silicon epitaxial transistorFor mid-speed ..
BN1F4M ,The BN1F4M is designed for use in medium speed switching circuit.PNP SILICON TRANSISTOR
BN1F4M
DESCRIPTION The BN1F4M is designed for use in medium speed swit ..
BN1L3M ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBN1L3Mon-chip resistor PNP silicon epitaxial transistorFor mid-speed ..
BD179-BD179.
Leaded Power Transistor General Purpose
BD179NPN SILICON TRANSISTOR STMicroelectronics PREFERRED
SALESTYPE NPN TRANSISTOR
APPLICATION GENERAL PURPOSE SWITCHING
DESCRIPTION The BD179 is a silicon epitaxial planar NPN
transistor in Jedec SOT-32 plastic package,
designed for medium power linear and switching
applications.
December 2000
ABSOLUTE MAXIMUM RATINGS1/5
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
* Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Area Derating Curves
BD1792/5
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
BD1793/5
BD1794/5
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
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BD1795/5
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