BD159STU ,NPN Epitaxial Silicon TransistorBD157/158/159BD157/158/159Low Power Fast Switching Output Stages• For T.V Radio Audio Output Amplif ..
BD15KA5WF-E2 , 500mA Variable/Fixed Output LDO Regulators Built-in thermal shutdown circuit
BD1604MUV , Backlight LED Drivers for Small LCD Panels (Charge Pump Type)
BD160GB64CE , 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
BD175 ,Leaded Power Transistor General Purpose
BD175 ,Leaded Power Transistor General Purpose
BN1A3Q ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBN1A3Qon-chip resistor PNP silicon epitaxial transistorFor mid-speed ..
BN1A4M ,The BN1A4M is designed for use in medium speed switching circuit.ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC MIN. TYP. MAX. UNIT
Input Resistance 7.0 ..
BN1A4P ,PNP SILICON TRANSISTORT PNP SILICON TRANSISTOR
BN1A4P
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DESCRIPTION The BN1A4P is designed for use i ..
BN1A4Z ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBN1A4Zon-chip resistor PNP silicon epitaxial transistorFor mid-speed ..
BN1F4M ,The BN1F4M is designed for use in medium speed switching circuit.PNP SILICON TRANSISTOR
BN1F4M
DESCRIPTION The BN1F4M is designed for use in medium speed swit ..
BN1L3M ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBN1L3Mon-chip resistor PNP silicon epitaxial transistorFor mid-speed ..
BD159STU
NPN Epitaxial Silicon Transistor
BD157/158/159 BD157/158/159 Low Power Fast Switching Output Stages • For T.V Radio Audio Output Amplifiers TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : BD157 275 V CBO : BD158 325 V : BD159 375 V V Collector-Emitter Voltage : BD157 250 V CEO : BD158 300 V : BD159 350 V V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 0.5 A C I *Collector Current (Pulse) 1.0 A CP I Base Current 0.25 A B P Collector Dissipation (T =25°C) 20 W C C T Junction Temperature 50 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV *Collector-Emitter Breakdown Voltage CEO : BD157 I = 1mA, I = 0 250 V C B : BD158 300 V : BD159 350 V I Collector Cut-off Current CBO : BD157 V = 275V, I = 0 100 μA CB E : BD158 V = 325V, I = 0 100 μA CB E : BD159 V = 375V, I = 0 100 μA CB E I Emitter Cut-off Current V = 5V, I = 0 100 μA EBO EB C h * DC Current Gain V = 10V, I = 50mA 30 240 FE CE C * Pulse Test: PW=300μs, duty Cycle=1.5% Pulsed ©2001 Rev. A1, June 2001
