BD14010S ,PNP Epitaxial Silicon TransistorApplications Complement to BD135, BD137 and BD139 respectivelyTO-12611. Emitter 2.Collector ..
BD140-16S ,PNP Epitaxial Silicon TransistorBD136/138/140BD136/138/140Medium Power Linear and Switching
BD140G , Plastic Medium Power Silicon PNP Transistor
BD157 , 20.000W Medium Power NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 30
BD159STU ,NPN Epitaxial Silicon TransistorBD157/158/159BD157/158/159Low Power Fast Switching Output Stages• For T.V Radio Audio Output Amplif ..
BD15KA5WF-E2 , 500mA Variable/Fixed Output LDO Regulators Built-in thermal shutdown circuit
BMR-0301E , System Reset IC
BMR-0302E , System Reset IC
BN1A3Q ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBN1A3Qon-chip resistor PNP silicon epitaxial transistorFor mid-speed ..
BN1A4M ,The BN1A4M is designed for use in medium speed switching circuit.ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC MIN. TYP. MAX. UNIT
Input Resistance 7.0 ..
BN1A4P ,PNP SILICON TRANSISTORT PNP SILICON TRANSISTOR
BN1A4P
lllhllEiiiiC:
DESCRIPTION The BN1A4P is designed for use i ..
BN1A4Z ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBN1A4Zon-chip resistor PNP silicon epitaxial transistorFor mid-speed ..
BD14010S-BD140-16S
PNP Epitaxial Silicon Transistor
BD136/138/140 BD136/138/140 Medium Power Linear and Switching Applications Complement to BD135, BD137 and BD139 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : BD136 - 45 V CBO : BD138 - 60 V : BD140 - 80 V V Collector-Emitter Voltage : BD136 - 45 V CEO : BD138 - 60 V : BD140 - 80 V V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 1.5 A C I Collector Current (Pulse) - 3.0 A CP I Base Current - 0.5 A B P Collector Dissipation (T =25°C) 12.5 W C C P Collector Dissipation (T =25°C) 1.25 W C a T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : BD136 I = - 30mA, I = 0 - 45 V C B : BD138 - 60 V : BD140 - 80 V I Collector Cut-off Current V = - 30V, I = 0 - 0.1 μA CBO CB E I Emitter Cut-off Current V = - 5V, I = 0 - 10 μA EBO EB C h * DC Current Gain V = - 2V, I = - 5mA 25 FE1 CE C h V = - 2V, I = - 0.5A 25 FE2 CE C h V = - 2V, I = - 150mA 40 250 FE3 CE C V (sat) * Collector-Emitter Saturation Voltage I = - 500mA, I = - 50mA - 0.5 V CE C B V (on) * Base-Emitter ON Voltage V = - 2V, I = - 0.5A - 1 V BE CE C * Pulse Test: PW=350μs, duty Cycle=2% Pulsed h Classificntion FE Classification 6 10 16 h 40 ~ 100 63 ~ 160 100 ~ 250 FE3 ©2000 Fairchild Semiconductor International Rev. A, February 2000
