BD136 ,Leaded Power Transistor General PurposeTHERMAL CHARACTERISTICSBD140 TO−225AA 500 Units/BoxÎÎÎÎÎÎCharacteristic Symbol Max Unit†For informa ..
BD137 ,Leaded Power Transistor General PurposeMaximum ratings applied to the device are individual stress limit values(not normal operating condi ..
BD1376S ,NPN Epitaxial Silicon TransistorBD135/137/139BD135/137/139Medium Power Linear and Switching
BD138 ,Leaded Power Transistor General PurposeFeatures• Pb−Free Package is Available* 1.5 A POWER TRANSISTORS• DC Current Gain − h = 40 (Min) @ I ..
BD138. ,Leaded Power Transistor General PurposeMAXIMUM RATINGSTO−225AAÎÎÎÎÎÎCASE 77Rating Symbol Value UnitSTYLE 1ÎÎCollector−Emitter Voltage BD13 ..
BD139 ,Leaded Power Transistor General PurposeBD135, BD137, BD139Plastic Medium PowerSilicon NPN TransistorThis series of plastic, medium−power s ..
BMP180 , BOOSTXL-SENSHUB Sensor Hub BoosterPack
BMR-0301E , System Reset IC
BMR-0302E , System Reset IC
BN1A3Q ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBN1A3Qon-chip resistor PNP silicon epitaxial transistorFor mid-speed ..
BN1A4M ,The BN1A4M is designed for use in medium speed switching circuit.ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC MIN. TYP. MAX. UNIT
Input Resistance 7.0 ..
BN1A4P ,PNP SILICON TRANSISTORT PNP SILICON TRANSISTOR
BN1A4P
lllhllEiiiiC:
DESCRIPTION The BN1A4P is designed for use i ..
BD136-BD138-BD138.-BD140
Leaded Power Transistor General Purpose
BD136, BD138, BD140
Plastic Medium Power
Silicon PNP T ransistor
This series of plastic, medium−power silicon PNP transistors are
designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
Features Pb−Free Package is Available* DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc BD 136, 138, 140 are complementary with BD 135, 137, 139
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