BD13910S ,NPN Epitaxial Silicon TransistorApplications Complement to BD136, BD138 and BD140 respectivelyTO-12611. Emitter 2.Collector ..
BD1396S ,NPN Epitaxial Silicon TransistorApplications Complement to BD136, BD138 and BD140 respectivelyTO-12611. Emitter 2.Collector ..
BD139G , Plastic Medium Power Silicon NPN Transistor
BD140 ,Leaded Power Transistor General PurposeMaximum ratings applied to the device are individual stress limit values(not normal operating condi ..
BD14010S ,PNP Epitaxial Silicon TransistorApplications Complement to BD135, BD137 and BD139 respectivelyTO-12611. Emitter 2.Collector ..
BD140-16S ,PNP Epitaxial Silicon TransistorBD136/138/140BD136/138/140Medium Power Linear and Switching
BMP180 , BOOSTXL-SENSHUB Sensor Hub BoosterPack
BMR-0301E , System Reset IC
BMR-0302E , System Reset IC
BN1A3Q ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBN1A3Qon-chip resistor PNP silicon epitaxial transistorFor mid-speed ..
BN1A4M ,The BN1A4M is designed for use in medium speed switching circuit.ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC MIN. TYP. MAX. UNIT
Input Resistance 7.0 ..
BN1A4P ,PNP SILICON TRANSISTORT PNP SILICON TRANSISTOR
BN1A4P
lllhllEiiiiC:
DESCRIPTION The BN1A4P is designed for use i ..
BD1356S-BD1376S-BD13910S-BD1396S
NPN Epitaxial Silicon Transistor
BD135/137/139 BD135/137/139 Medium Power Linear and Switching Applications Complement to BD136, BD138 and BD140 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : BD135 45 V CBO : BD137 60 V : BD139 80 V V Collector-Emitter Voltage : BD135 45 V CEO : BD137 60 V : BD139 80 V V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 1.5 A C I Collector Current (Pulse) 3.0 A CP I Base Current 0.5 A B P Collector Dissipation (T =25°C) 12.5 W C C P Collector Dissipation (T =25°C) 1.25 W C a T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) Collector-Emitter Sustaining Voltage CEO : BD135 I = 30mA, I = 0 45 V C B : BD137 60 V : BD139 80 V I Collector Cut-off Current V = 30V, I = 0 0.1 μA CBO CB E I Emitter Cut-off Current V = 5V, I = 0 10 μA EBO EB C h DC Current Gain : ALL DEVICE V = 2V, I = 5mA 25 FE1 CE C h : ALL DEVICE V = 2V, I = 0.5A 25 FE2 CE C h : BD135 V = 2V, I = 150mA 40 250 FE3 CE C : BD137, BD139 40 160 V (sat) Collector-Emitter Saturation Voltage I = 500mA, I = 50mA 0.5 V CE C B V (on) Base-Emitter ON Voltage V = 2V, I = 0.5A 1 V BE CE C h Classification FE Classification 6 10 16 h 40 ~ 100 63 ~ 160 100 ~ 250 FE3 ©2000 Fairchild Semiconductor International Rev. A, February 2000
