BD135 ,Leaded Power Transistor General PurposeTHERMAL CHARACTERISTICS(Pb−Free)ÎÎÎÎÎÎCharacteristic Symbol Max Unit†For information on tape and re ..
BD135. ,Leaded Power Transistor General PurposeMAXIMUM RATINGSTO−225AAÎÎÎÎÎÎCASE 77Rating Symbol Value UnitSTYLE 1ÎÎCollector−Emitter Voltage BD13 ..
BD135-10 , 12.500W Switching NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 63
BD135-16 , 12.500W Switching NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 100
BD1356S ,NPN Epitaxial Silicon TransistorBD135/137/139BD135/137/139Medium Power Linear and Switching
BD136 ,Leaded Power Transistor General PurposeTHERMAL CHARACTERISTICSBD140 TO−225AA 500 Units/BoxÎÎÎÎÎÎCharacteristic Symbol Max Unit†For informa ..
BMP180 , BOOSTXL-SENSHUB Sensor Hub BoosterPack
BMR-0301E , System Reset IC
BMR-0302E , System Reset IC
BN1A3Q ,Compound transistorDATA SHEETCOMPOUND TRANSISTORBN1A3Qon-chip resistor PNP silicon epitaxial transistorFor mid-speed ..
BN1A4M ,The BN1A4M is designed for use in medium speed switching circuit.ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC MIN. TYP. MAX. UNIT
Input Resistance 7.0 ..
BN1A4P ,PNP SILICON TRANSISTORT PNP SILICON TRANSISTOR
BN1A4P
lllhllEiiiiC:
DESCRIPTION The BN1A4P is designed for use i ..
BD135-BD135.-BD137-BD139
Leaded Power Transistor General Purpose
BD135, BD137, BD139
Plastic Medium Power
Silicon NPN T ransistor
This series of plastic, medium−power silicon NPN transistors are
designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
Features Pb−Free Package is Available* DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc BD 135, 137, 139 are complementary with BD 136, 138, 140
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*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
