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BD135-16 |BD13516STN/a890avai 12.500W Switching NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 100


BD135-16 , 12.500W Switching NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 100
BD1356S ,NPN Epitaxial Silicon TransistorBD135/137/139BD135/137/139Medium Power Linear and Switching
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BD1376S ,NPN Epitaxial Silicon TransistorBD135/137/139BD135/137/139Medium Power Linear and Switching
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BD135-16
12.500W Switching NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 63
BD135
BD139

NPN SILICON TRANSISTORS STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION

The BD135 and BD139 are silicon Epitaxial
Planar NPN transistors mounted in Jedec
SOT-32 plastic package, designed for audio
amplifiers and drivers utilizing complementary or
quasi-complementary circuits.
The complementary PNP types are BD136 and
BD140 respectively.
September 2001
ABSOLUTE MAXIMUM RATINGS

1/4
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
* Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
Safe Operating Area
BD135 / BD139

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BD135 / BD139
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. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
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BD135 / BD139

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