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BCY71 ,Leaded Small Signal Transistor General PurposeELECTRICAL CHARACTERISTICS (Tamb = 25 ( unless otherwise specified)
Symbol Parameter Test Conditio ..
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BCY70-BCY71
Leaded Small Signal Transistor General Purpose
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S G S-THONSON
GENERAL PURPOSE APPLICATIONS
DESCRIPTION
The BCY70, BCY71 and BCY72 are silicon planar
epitaxialPNPtransistorsinJedecTO-18metal
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Unit
BCY70 BCY71 BCY72
cho Collector-base Voltage (le = 0) - 50 - 45 - 25 V
Vcao Collector-emitter Voltage (hs = O) - 4O - 45 - 25 V
VEBO Emitter-base Voltage (lo = O) - 5 V
lcu Collector Peak Current - 200 mA
Pun Total Power Dissipation at Tam, S 25 °C 350 mW
Tsta, T, Storage and Junction Temperature - 65 to 200 CC
. Pulsed : pulse duration = 300 us. duty cycle = 1 %.
October 1988 1/5
This Material Copyrighted By Its Respective Manufacturer
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BCY70- BCY71- BCY72 S 6 s- "THOMSON --
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Rm i-case Thermal Resistance Junction-case Max 150 °C/W
Rm i-amb Thermal Resistance Junction-ambient Max 500 °C/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 'C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Ices Collector Cutoff Current For BCY70
(VBE =0) VCE =--20V -10 nA
VCE = - 50 V - 600 nA
For BCY71
VoB---20V -100 nA
Voss = - 45 V - 1O pA
For BCY72
VtoB=-20V -100 nA
Vca = - 25 V - 10 LIA
IEBO Emitter cutoff Current VEB = - 5 V - 10 pA
chsm)‘ Collector-emitter Saturation Ic =- 10 mA l3 =- 1 mA - 0.25 V
Voltage IO =- 50 mA IB =- 5 mA - 0.5 V
VBHsan“ Base-Emitter Saturation Voltage Ic Tw.- 10 mA Iss .= - 1 mA
For BCY70 and BCY71 Only - 0.6 - 0.9 V
lcr---50mA lia----5mA -1.2 V
hFE* DC Current Gain For BCY70
Ic=-thlrnA Vce=-1V 40
ICC-a-lm/k Vceu-a--1V 45
Ic-----) VoEu-a--1V 50
lt3.--.-60mA ch=-1V 15
For BCY71
[c =- 0.01 mA VCE =-1 V 60
Ic=-0.1mA Vc5=-1V 80
Icr--.-lmA VcE=--1V 90
Ic----) VCE---1 V 100 600
Ic-----') Vce=-1V 15
For BCY72
:c=-1mA VOE=-1V 40
. c=-10mA VcE.---1V 50
hn, Small Signal Current Gain lc = - 1 mA VCE ---- 10 V 100 400
(for BCY71 only) f=1 kHz
fr Transition Frequency IC = - 0.1 mA VCE = - 20 V
f = 10.7 MHz
For BCY71 15 MHz
Its.----) VCE----'
f = 100 MHz
For BCY70 250 MHz
For BCY70 and BCY72 200 MHz
CEBO Emitter-base Capacitance Io = 0 VEB = - 1 V
f = 1 MHz 8 pF
cho Collector-base Capacitance IE = 0 V03 = - 10 V pF
f = 1 MHz 6
* Pulsed : pulse duration = 300 us, duty cycle = 1 %.
F SGS-THDMSON
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This Material Copyrighted By Its Respective Manufacturer
