BCX69 ,PNP Silicon AF TransistorCharacteristicsCollector-emitter breakdown voltage V 20 - - V(BR)CEOI = 30 mA, I = 0 C BCollector-b ..
BCX69 ,PNP Silicon AF Transistorapplications2• High collector current3• High current gain• Low collector-emitter saturation voltage ..
BCX69 ,PNP Silicon AF TransistorCharacteristics at T = 25°C, unless otherwise specified.AParameter Symbol Values Unitmin. typ. max.
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BCX69
PNP Silicon AF Transistor
BCX 69
PNP Silicon AF Transistors• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type: BCX 68 (NPN)
Maximum Ratings
Thermal Resistance
BCX 69
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Characteristics
AC Characteristics
BCX 69
Total power dissipation PS)
* Package mounted on epoxy0.0
15050100CT
PtotT;AS
Transition frequency f101010EHP0046923510Ι
Collector cutoff current ICBO = f (TA)CB = 25V050100150EHP00471CB0
Permissible pulse loadtotmax / PtotDC = f (tp)1010-5-4-3-20
totmax
totPDC
BCX 69
Collector-emitter saturation voltage0.40.8EHP00473
VCE sat0
0.20.6Ι
Base-emitter saturation voltageC = f (V00.6
VBE sat0.20.40.81.01.2Ι
Collector current IC = f (VBE)CE = 1V00.60.20.40.81.01.2Ι
DC current gain hFE = f (IC)CE = 1VEHP00475013410
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