BCX58 ,NPN Silicon AF TransistorCharacteristicsat TA = 25 ˚C, unless otherwise specified.Parameter Symbol Values Unitmin. typ. max. ..
BCX59 ,NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)NPN Silicon AF Transistors BCX 58BCX 59● High current gain● Low collector-emitter saturation vo ..
BCX68-25 ,NPN Silicon AF Transistors (For general AF applications High collector current)
BCX68-25 ,NPN Silicon AF Transistors (For general AF applications High collector current)
BCX6825TA , 20V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89
BCX69 ,PNP Silicon AF TransistorCharacteristicsCollector-emitter breakdown voltage V 20 - - V(BR)CEOI = 30 mA, I = 0 C BCollector-b ..
BLY88C ,Trans GP BJT NPN 18V 3A 4-Pin CRPM
BLY88C ,Trans GP BJT NPN 18V 3A 4-Pin CRPM
BLY88C ,Trans GP BJT NPN 18V 3A 4-Pin CRPM
BM03B-SRSS-TB , Disconnectable Insulation displacement connectors
BM07B-SRSS-TB , Disconnectable Insulation displacement connectors
BM-10457ND , LED DOT MATRIX DISPLAY
BCX58-BCX59
NPN Silicon AF Transistor
SHIEMIENS
NPN Silicon AF Transistors BCX 58
BCX 59
0 High current gain
0 Low collector-emitter saturation voltage
0 Complementary types: BCX 78, BCX 79 (PNP)
tii:1titti 3
Type Marking Ordering Code Pin Configuration Package')
BCX 58 VIII - Q62702-C619 C B E TO-92
BCX 58 IX Q62702-C620
BCX 58 X Q62702-C621
BCX 59 VIII Q62702-C623
BCX 59 IX Q62702-C624
BCX 59 X Q62702-C625
Maximum Ratings
Parameter Symbol Values Unit
BCX 58 BCX 59
Collector-emitter voltage VCEo 32 45 V
Collector-base voltage VCBo 32 45
Emitter-base voltage VEBO 7
Collector current 10 100 mA
Peak collector current [cm 200
Peak base current has, 200
Total power dissipation, To = 70 ( Ptot 500 mW
Junction temperature T, 150 (
Storage temperature range Tstg - 65 ... + 150
Thermal Resistance
Junction - ambient RthJA f 250 KNV
Junction - case) Rmuc f 160
1) For detailed information see chapter Package Outlines.
2) Mounted on Al heat sink 15 mm X 25 mm X 0.5 mm.
1 5.91
Semiconductor Group
Sll EM IENS BCX 58
BCX 59
Electrical Characteristics
at TA = 25 ''C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage V(BR)CEO V
Ic = 2 mA BCX 58 32 - -
BCX 59 45 - -
Collector-base breakdown voltage V(BR)CBO
Ic = 10 “A BCX 58 32 - -
BCX 59 45 - -
Emitter-base breakdown voltage V(BR)EBo 7 - -
IE = 1 PA
Collector cutoff current ha,
Vcs = 32 V BCX 58 - - 20 nA
Vca = 45 V BCX 59 - - 20 nA
Vca = 32 V, TA = 150 ( BCX 58 - - 10 “A
Vca=45 V, TA-- 150 ( BCX 59 - - IO pA
Collector cutoff current 1ch “A
VCE=32 V, VBE=0.2 V,TA= 100 ( - - 20
VCE=45 V, VBE=0.2 V,TA= 100 DC - - 20
Emitter cutoff current IEBO - - 20 nA
VEB = 4 V
DC current gain hFE -
Ic=10wA, VCE=5V
BCX 58 VII, BCX 59 VII 20 78 -
BCX 58 VIII, BCX 59 VIII 20 145 -
BCX 58 IX, BCX 59 IX 40 220 -
BCX 58 X, BCX 59 X 100 300 -
IC=2mA, VCE=5V
BCX 58 VII, BCX 59 VII 120 170 220
BCX 58 VIII, BCX 59 VIII 180 250 310
BCX 58 IX, BCX 59 IX 250 350 460
BCX 58 X, BCX 59 X 380 500 630
Ic = 100 mA, Vce =1VI)
BCX 58 VII, BCX 59 VII 40 - -
BCX 58 VIII, BCX 59 VIII 45 - -
BCX 58 IX, BCX 59 IX 60 - -
BCX 58 X, BCX 59 X 60 - -
1) Pulse test: ts: 300 us, D s 2 %.
Semiconductor Group
