BCW69 ,Surface mount Si-Epitaxial PlanarTransistorsBCW69BCW70SMALL SIGNAL PNP TRANSISTORSType MarkingBCW69 H1BCW70 H2n SILICON EPITAXIALPLANAR PNPTRAN ..
BCW69 ,Surface mount Si-Epitaxial PlanarTransistorsElectrical Characteristics (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
BCW69 ,Surface mount Si-Epitaxial PlanarTransistors
BCW69 ,Surface mount Si-Epitaxial PlanarTransistors
BCW69 ,Surface mount Si-Epitaxial PlanarTransistors
BCW70 ,Surface mount Si-Epitaxial PlanarTransistorsABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-Emitter Voltage (V =0) -50 VCES BEV ..
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BCW69-BCW70
Surface mount Si-Epitaxial PlanarTransistors
BCW69
BCW70SMALL SIGNAL PNP TRANSISTORS SILICON EPITAXIALPLANAR PNP
TRANSISTORS MINIATUREPLASTIC PACKAGE FOR
APPLICATIONIN SURFACE MOUNTING
CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND
SWITCHING
INTERNAL SCHEMATIC DIAGRAMMarch 1996
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value UnitVCES Collector-Emitter Voltage (VBE =0) -50 V
VCEO Collector-Emitter Voltage(IB =0) -45 V
VCBO Collector-Base Voltage(IE =0) -50 V
VEBO Emitter-Base Voltage(IC =0) -5 V Collector Current -0.1 A
ICM Collector Peak Current -0.2 A
Ptot Total DissipationatTc =25o C300 mW
Tstg Storage Temperature -65to 150 oC Max. Operating Junction Temperature 150 oC
SOT-23
Type MarkingBCW69 H1
BCW70 H2
1/4
THERMAL DATARthj-amb• Thermal Resistance Junction-Ambient Max 420 o C/W Mountedona ceramic substrate area=10x8x 0.6mm
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. UnitICBO Collector Cut-off
Current(IE =0)
VCB =-20V
VCB =-20V Tj =100oC
V(BR)CES∗ Collector-Emitter
Breakdown Voltage
(VBE =0) =-10 μA-50 V
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB =0) =-2 mA -45 V
V(BR)CBO∗ Collector-Base
Breakdown Voltage
(IE =0) =-10 μA-50 V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC =0) =-10 μA-5 V
VCE(sat)∗ Collector-Emitter
Saturation Voltage =-10 mA IB =-0.5 mA =-50 mA IB= -2.5 mA -0.18
-0.3 V
VBE(sat)∗ Collector-Base
Saturation Voltage =-10 mA IB =-0.5 mA =-50 mA IB =-2.5 mA
VBE(on)∗ Base-Emitter On
Voltage =-2 mA VCE=-5V -0.6 -0.75 V
hFE∗ DC Current Gain for
BCW69 =-10 μAVCE =-5V =-2 mA VCE =-5V
for
BCW70 =-10 μAVCE =-5V =-2 mA VCE =-5V
500 Transition Frequency IC =-10 mA VCE=-5Vf= 100 MHz 150 MHz
CCB Collector Base
Capacitance =0 VCB =-10Vf= 1MHz 7 dB Noise Figure IC =-0.2mA VCE =-5Vf= 1KHz= 200Hz Rg =2KΩ dB
∗ Pulsed: Pulse duration=300μs, duty cycle≤ 2%
BCW69/BCW702/4
DIM. mm mils
MIN. TYP. MAX. MIN. TYP. MAX. 0.85 1.1 33.4 43.3 0.65 0.95 25.6 37.4 1.20 1.4 47.2 55.1 2.80 3 110.2 118 0.95 1.05 37.4 41.3 1.9 2.05 74.8 80.7 2.1 2.5 82.6 98.4 0.38 0.48 14.9 18.8 0.3 0.6 11.8 23.6 0 0.1 0 3.9 0.3 0.65 11.8 25.6 0.09 0.17 3.5 6.7
0044616/B
SOT-23 MECHANICAL DATA
BCW69/BCW703/4
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SGS-THOMSONMicroelectronics productsarenot authorizedfor useascriticalcomponentsin lifesupportdevicesor systems withoutexpress
writtenapprovalof SGS-THOMSONMicroelectonics. 1995 SGS-THOMSONMicroelectronics- Printedin Italy- AllRights Reserved
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BCW69/BCW704/4
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