BCW66F ,General Purpose TransistorsCharacteristicsCollector-emitter breakdown voltage V V(BR)CEOI = 10 mA, I = 0 32 - -BCW65C B45 - ..
BCW66G ,Surface mount Si-Epitaxial PlanarTransistorsCharacteristicsDC current gain 1) -hFEI = 500 mA, V = 2 V h -grp.A/F - 35 -C CE FEh -grp.B/G - ..
BCW66GLT1 ,General Purpose NPN TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
BCW66GLT1 ,General Purpose NPN TransistorTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FRï 5 Board P 225 mW ..
BCW66H ,SMD Small Signal Transistor NPN High CurrentCharacteristics at T = 25°C, unless otherwise specified.AParameter Symbol Values Unitmin. typ. max. ..
BCW67A ,PNP Silicon AF Transistors (For general AF applications High current gain)
BLM21BD421SN1D , EMIFIL (Inductor type) Chip Ferrite Bead BLM21B Series (0805 Size)
BLM21BD421SN1D , EMIFIL (Inductor type) Chip Ferrite Bead BLM21B Series (0805 Size)
BLM21BD471SN1D , EMIFIL (Inductor type) Chip Ferrite Bead BLM21B Series (0805 Size)
BLM21BD471SN1D , EMIFIL (Inductor type) Chip Ferrite Bead BLM21B Series (0805 Size)
BLM21BD751SN1D , EMIFIL (Inductor type) Chip Ferrite Bead BLM21B Series (0805 Size)
BLM21PG220SN1D , EMIFIL (Inductor type) Chip Ferrite Bead
BCW65C-BCW66F-BCW66G-BCW66H
General Purpose Transistors
BCW65, BCW66
NPN Silicon AF Transistor For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW67, BCW68 (PNP)
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
BCW65, BCW66
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC Characteristics
BCW65, BCW66
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC Characteristics
AC Characteristics
BCW65, BCW66
Transition frequency fEHP0039110mA101102f
Total power dissipation Ptot = f(TS)
30
60
90
120
150
180
210
240
270
300
360
tot
Permissible pulse loadtotmax / PtotDC = f (tp)1010-5-4-3-20
totmax
totPDC
Collector cutoff current ICBO = f (TA)CB = VCEmax050100150EHP00393CB0
BCW65, BCW66
Collector-emitter saturation voltage0600EHP00395CE sat200400800Ι
Base-emitter saturation voltageC = f (V03
VBE sat124
DC current gain hFE = f (IC)CE = 1V-10231010
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