BCW61B ,Transistors, RF & AFCharacteristics at T = 25°C, unless otherwise specified.AParameter Symbol Values Unitmin. typ. max. ..
BCW61BLT1 ,General Purpose Transistors**Order this documentSEMICONDUCTOR TECHNICAL DATAby BCW61BLT1/D * * **PNP SiliconCOLLECTOR31BASE32E ..
BCW61BMTF ,PNP Epitaxial Silicon TransistorBCW61A/B/C/DBCW61A/B/C/DGeneral Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP E ..
BCW61-B-MTF ,PNP Epitaxial Silicon TransistorBCW61A/B/C/DBCW61A/B/C/DGeneral Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP E ..
BCW61C ,SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORSapplications3
BCW61-BCW61A-BCW61B-BCW61C-BCW61D
General Purpose Transistors
BCW61, BCX71
PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 (NPN)
BCW61, BCX71
Maximum Ratings
Thermal Resistance
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC CharacteristicsFor calculation of RthJA please refer to Application Note Thermal Resistance
BCW61, BCX71
Electrical Characteristics at TA = 25°C, unless otherwise specified.
AC Characteristics
BCW61, BCX71
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Characteristics
AC Characteristics
BCW61, BCX71
AC Characteristics
BCW61, BCX71
Collector-base capacitance C = f (VCBO
Emitter-base capacitance CEBO)
EHP00344110V100
CBOVVEBO
EBOC
CCBO((
Total power dissipation Ptot = f(TS)
30
60
90
120
150
180
210
240
270
300
360
tot
Permissible pulse loadtotmax / PtotDC = f (tp)1010-5-4-3-20
totmax
totPDC
Transition frequency fT = f (IC)CE = 5V
EHP003471012f
