BCW60ALT1 ,General Purpose TransistorsTHERMAL CHARACTERISTICSCharacteristic Symbol Max Unit(1)Total Device Dissipation FR–5 Board P 225 m ..
BCW60B ,Surface mount Si-Epitaxial PlanarTransistorsLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).SYMBOL PARAMETER CON ..
BCW60BLT1 ,General Purpose TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
BCW60D ,NPN EPITAXIAL SILICON TRANSISTORRev. 1.2, 19-Aug-04 1BCW60 SeriesVISHAYVishay SemiconductorsElectrical DC CharacteristicsParameter ..
BCW60D ,NPN EPITAXIAL SILICON TRANSISTOR
BCW60D ,NPN EPITAXIAL SILICON TRANSISTOR
BLM21BB121SN1D , EMIFIL (Inductor type) Chip Ferrite Bead BLM21B Series (0805 Size)
BLM21BB121SN1D , EMIFIL (Inductor type) Chip Ferrite Bead BLM21B Series (0805 Size)
BLM21BB221SN1D , EMIFIL (Inductor type) Chip Ferrite Bead BLM21B Series (0805 Size)
BLM21BB221SN1D , EMIFIL (Inductor type) Chip Ferrite Bead BLM21B Series (0805 Size)
BLM21BB600SN1D , EMIFIL (Inductor type) Chip Ferrite Bead BLM21B Series (0805 Size)
BLM21BB600SN1D , EMIFIL (Inductor type) Chip Ferrite Bead BLM21B Series (0805 Size)
BCW60ALT1-BCW60BLT1-BCW60DLT1
General Purpose Transistors
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NPN Silicon
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
OFF CHARACTERISTICS FR–5 = 1.0 0.75 0.062 in. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
COLLECTOR
BASE
EMITTER
