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Partno	Mfg	Dc	Qty	Available	Descript
BCW30	西门子	N/a	4800	avai	Surface mount Si-Epitaxial PlanarTransistors

BCW30 ,Surface mount Si-Epitaxial PlanarTransistorsBCW30SMALL SIGNAL PNP TRANSISTORSType MarkingBCW30 C2n SILICON EPITAXIALPLANAR PNPTRANSISTORSn MINI ..
BCW30LT1 ,General Purpose TransistorsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
BCW30LT1 ,General Purpose Transistors
BCW30LT1 ,General Purpose Transistors
BCW30LT1 ,General Purpose Transistors3R , SOURCE RESISTANCE (OHMS) R , SOURCE RESISTANCE (OHMS) e , NOISE VOLTAGE (nV)S S nR , SOURCE RE ..
BCW30LT1 ,General Purpose Transistors2BCW30LT1TYPICAL NOISE CHARACTERISTICS(V = –5.0 Vdc, T = 25°C)CE A10 1.0BANDWIDTH = 1.0 Hz7.0BANDWI ..
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BCW30
Surface mount Si-Epitaxial PlanarTransistors
BCW30
SMALL SIGNAL PNP TRANSISTORS SILICON EPITAXIALPLANAR PNP
TRANSISTORS MINIATUREPLASTIC PACKAGE FOR
APPLICATIONIN SURFACE MOUNTING
CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND
SWITCHING
INTERNAL SCHEMATIC DIAGRAM
October 1997
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE =0) -32 V
VCEO Collector-Emitter Voltage(IB =0) -32 V
VCBO Collector-Base Voltage(IE =0) -32 V
VEBO Emitter-Base Voltage(IC =0) -5 V Collector Current -0.1 A
ICM Collector Peak Current -0.2 A
Ptot Total DissipationatTc =25o C300 mW
Tstg Storage Temperature -65to 150 oC Max. Operating Junction Temperature 150 oC
SOT-23
Type Marking
BCW30 C2
1/4
THERMAL DATA
Rthj-amb• Thermal Resistance Junction-Ambient Max 420 o C/W Mountedona ceramic substrate area=10x8x 0.6mm
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current(IE =0)
VCB =-30V
VCB =-30V Tj =100oC
V(BR)CES∗ Collector-Emitter
Breakdown Voltage
(VBE =0) =-10 μA-32 V
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB =0) =-2 mA -32 V
V(BR)CBO∗ Collector-Base
Breakdown Voltage
(IB =0) =-10 μA-32 V
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC =0) =-10 μA-5 V
VCE(sat)∗ Collector-Emitter
Saturation Voltage =-10 mA IB =-0.5 mA =-50 mA IB= -2.5 mA -0.18
-0.3 V
VBE(sat)∗ Collector-Base
Saturation Voltage =-10 mA IB =-0.5 mA =-50 mA IB =-2.5 mA
VBE(on)∗ Base-Emitter On
Voltage =-2 mA VCE=-5V -0.6 -0.75 V
hFE∗ DC Current Gain IC =-10 μAVCE =-5V =-2 mA VCE=-5V 215
500 Transition Frequency IC =-10 mA VCE=-5Vf= 100 MHz 150 MHz
CCB Collector Base
Capacitance =0 VCB =-10Vf= 1MHz 7 dB Noise Figure IC =-0.2mA VCE =-5Vf= 1KHz= 200Hz Rg =2KΩ dB
∗ Pulsed: Pulse duration=300μs, duty cycle≤ 2%
BCW30
2/4
DIM. mm mils
MIN. TYP. MAX. MIN. TYP. MAX. 0.85 1.1 33.4 43.3 0.65 0.95 25.6 37.4 1.20 1.4 47.2 55.1 2.80 3 110.2 118 0.95 1.05 37.4 41.3 1.9 2.05 74.8 80.7 2.1 2.5 82.6 98.4 0.38 0.48 14.9 18.8 0.3 0.6 11.8 23.6 0 0.1 0 3.9 0.3 0.65 11.8 25.6 0.09 0.17 3.5 6.7
0044616/B
SOT-23 MECHANICAL DATA
BCW30
3/4
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consequencesofuse ofsuch informationnorfor anyinfringementof patentsor otherrightsof third parties which may resultsfromits use.No
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writtenapprovalof SGS-THOMSONMicroelectonics. 1997 SGS-THOMSONMicroelectronics- Printedin Italy- AllRights Reserved
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BCW30
4/4
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